Feasibility study to determine the suitability of using TiN/W and Si1-xGex as alternative gate materials for sub-0.1-ｦﾌm gate-length PMOS devices

Feasibility study to determine the suitability of using TiN/W and Si1-xGex as alternative gate materials for sub-0.1-ｦﾌm gate-length PMOS devices

Author(s):

Murtaza,S.S. ( Texas Instruments Inc. )
Hu,J.C. ( Texas Instruments Inc. )
Unnikrishnan,S. ( Texas Instruments Inc. )
Rodder,M. ( Texas Instruments Inc. )
Chen,I.-C. ( Texas Instruments Inc. )

Publication title:

Microelectronic device technology II : 23-24 September, 1998, Santa Clara, California

Title of ser.:

Proceedings of SPIE - the International Society for Optical Engineering

Ser. no.:

3506

Pub. Year:

1998

Page(from):

49

Page(to):

55

Pub. info.:

Bellingham, Washington: SPIE-The International Society for Optical Engineering

ISSN:

0277786X

ISBN:

9780819429650 [0819429651]

Language:

English

Call no.:

P63600/3506

Type:

Conference Proceedings

Details

TDL ID:	ZA00016438
Series ID:	PA00000029
Conf. info. (Name):	Microelectronic Manufacturing : Microelectronic device technology
Conf. info. (Number):	1998 : 2nd
Conf. info. (Venue):	Santa Clara, CA, USA
Conf. info. (Date):	1998.09.23-1998.09.24

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