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Feasibility study to determine the suitability of using TiN/W and Si1-xGex as alternative gate materials for sub-0.1-ヲフm gate-length PMOS devices

Author(s):
Publication title:
Microelectronic device technology II : 23-24 September, 1998, Santa Clara, California
Title of ser.:
Proceedings of SPIE - the International Society for Optical Engineering
Ser. no.:
3506
Pub. date:
1998
Page(from):
49
Page(to):
55
Pub. info.:
Bellingham, Washington: SPIE-The International Society for Optical Engineering
ISSN:
0277786X
ISBN:
9780819429650 [0819429651]
Language:
English
Call no.:
P63600/3506
Type:
Conference Proceedings

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