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High-power 980-nm InGaAs/GaAs/AIGaAs window structure lasers fabricated by impurity-free vacancy diffusion

Author(s):
Xu,Z. ( Beijing Polytechnic Univ.(China) and Institute of Semiconductors (China) )
Yang,G. ( Institute of Semiconductors (China) )
Yin,T. ( Beijing Polytechnic Univ.(China) )
Lian,P. ( Beijing Polytechnic Univ.(China) )
Li,B. ( Institute of Semiconductors (China) )
Zhang,J. ( Institute of Semiconductors (China) )
Gao,G. ( Beijing Polytechnic Univ.(China) )
Xu,J. ( Institute of Semiconductors (China) )
Chen,L. ( Institute of Semiconductors (China) )
Shen,G. ( Beijing Polytechnic Univ.(China) )
5 more
Publication title:
Semiconductor Lasers III
Title of ser.:
Proceedings of SPIE - the International Society for Optical Engineering
Ser. no.:
3547
Pub. Year:
1998
Page(from):
54
Page(to):
60
Pub. info.:
Bellingham, Wash.: SPIE-The International Society for Optical Engineering
ISSN:
0277786X
ISBN:
9780819430083 [0819430080]
Language:
English
Call no.:
P63600/3547
Type:
Conference Proceedings

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