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Carbon-doped 980-nm InGaAs strained quantum well lasers grown by metal-organic chemical vapor deposition (Invited Paper)

Author(s):
Yin,T. ( Beijing Polytechnic Univ.(China) )
Lian,P. ( Beijing Polytechnic Univ.(China) )
Xu,Z. ( Beijing Polytechnic Univ.(China) )
Chen,C. ( Beijing Polytechnic Univ.(China) )
Zhao,H. ( Beijing Polytechnic Univ.(China) )
Zou,D. ( Beijing Polytechnic Univ.(China) )
Chen,J. ( Beijing Polytechnic Univ.(China) )
Gao,G. ( Beijing Polytechnic Univ.(China) )
Du,J. ( Beijing Polytechnic Univ.(China) )
Tao,C. ( Beijing Polytechnic Univ.(China) )
Shen,G. ( Beijing Polytechnic Univ.(China) )
Lu,H. ( Institute of Semiconductors (China) )
Zheng,L. ( Institute of Semiconductors (China) )
Chen,L. ( Institute of Semiconductors (China) )
9 more
Publication title:
Semiconductor Lasers III
Title of ser.:
Proceedings of SPIE - the International Society for Optical Engineering
Ser. no.:
3547
Pub. Year:
1998
Page(from):
48
Page(to):
53
Pub. info.:
Bellingham, Wash.: SPIE-The International Society for Optical Engineering
ISSN:
0277786X
ISBN:
9780819430083 [0819430080]
Language:
English
Call no.:
P63600/3547
Type:
Conference Proceedings

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