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High-performance 155-ｦﾌm InGaAsP/InP strained-layer quantum well laser diodes fabricated by MOCVD overgrowth method

Author(s):
Ma,X. ( Institute of Semiconductors (China) )
Cao,Q. ( Institute of Semiconductors (China) )
Wang,S. ( Institute of Semiconductors (China) )
Guo,L. ( Institute of Semiconductors (China) )
Wang,Z. ( Institute of Semiconductors (China) )
Wang,L. ( Institute of Semiconductors (China) )
He,G. ( Institute of Semiconductors (China) )
Yang,Y. ( Institute of Semiconductors (China) )
Zhang,H. ( Institute of Semiconductors (China) )
Zhou,X. ( Institute of Semiconductors (China) )
Chen,L. ( Institute of Semiconductors (China) )
6 more
Publication title:
Semiconductor Lasers III
Title of ser.:
Proceedings of SPIE - the International Society for Optical Engineering
Ser. no.:
3547
Pub. Year:
1998
Page(from):
8
Page(to):
11
Pub. info.:
Bellingham, Wash.: SPIE-The International Society for Optical Engineering
ISSN:
0277786X
ISBN:
9780819430083 [0819430080]
Language:
English
Call no.:
P63600/3547
Type:
Conference Proceedings

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