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Carrier tunneling in ZnCdSeJZnSe asymmetric double-quantum-well structure

Author(s):
Yu,G. ( Changchun Institute of Physics (China) )
Fan,X. ( Changchun Institute of Physics (China) )
Zhang,J. ( Changchun Institute of Physics (China) )
Yang,B. ( Changchun Institute of Physics (China) )
Zhao,X. ( Changchun Institute of Physics (China) )
Shen,D. ( Changchun Institute of Physics (China) )
Kong,X. ( Changchun Institute of Physics (China) )
2 more
Publication title:
Electro-optic and second harmonic generation materials, devices, and applications II : 18-19 September, 1998, Beijing, China
Title of ser.:
Proceedings of SPIE - the International Society for Optical Engineering
Ser. no.:
3556
Pub. Year:
1998
Page(from):
166
Page(to):
169
Pub. info.:
Bellingham, Washington: SPIE-The International Society for Optical Engineering
ISSN:
0277786X
ISBN:
9780819430175 [081943017X]
Language:
English
Call no.:
P63600/3556
Type:
Conference Proceedings

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