1.

国際会議録
国際会議録
1. Electrical Characteristics of 4H-SiC BJTs at Elevated Temperatures
Lee, H. S. ; Domeij, M. ; Danielsson, E. ; Zetterling, C. M. ; Ostling, M.
出版情報: Silicon carbide and related materials 2004 : ECSCRM 2004 : proceedings of the 5th European Conference on Silicon Carbide and Related Materials, August 31 - September 4 2004, Bologna, Italy.  pp.897-900,  2005.  Uetikon-Zuerich.  Trans Tech Publications
シリーズ名: Materials science forum
シリーズ巻号: 483-485
2.

国際会議録
国際会議録
2. A 4H-SiC BJT with an Epitaxially Regrown Extrinsic Base Layer
Danielsson, E. ; Domeij, M. ; Lee, H. S. ; Zetterling, C. M. ; Ostling, M. ; Schoner, A. ; Hallin, C.
出版情報: Silicon carbide and related materials 2004 : ECSCRM 2004 : proceedings of the 5th European Conference on Silicon Carbide and Related Materials, August 31 - September 4 2004, Bologna, Italy.  pp.905-908,  2005.  Uetikon-Zuerich.  Trans Tech Publications
シリーズ名: Materials science forum
シリーズ巻号: 483-485
3.

国際会議録
国際会議録
3. Current Gain of 4H-SiC Bipolar Transistors Including the Effect of Interface States
Domeij, M. ; Danielsson, E. ; Lee, H. S. ; Zetterling, C. M. ; Ostling, M.
出版情報: Silicon carbide and related materials 2004 : ECSCRM 2004 : proceedings of the 5th European Conference on Silicon Carbide and Related Materials, August 31 - September 4 2004, Bologna, Italy.  pp.889-892,  2005.  Uetikon-Zuerich.  Trans Tech Publications
シリーズ名: Materials science forum
シリーズ巻号: 483-485