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Recombination at Dislocations in Silicon and Gallium Arsenide

著者名:
掲載資料名:
Point and extended defects in semiconductors
シリーズ名:
NATO ASI series. Series B, Physics
シリーズ巻号:
202
発行年:
1989
開始ページ:
243
終了ページ:
256
総ページ数:
14
出版情報:
New York: Plenum Press
ISBN:
9780306433368 [0306433367]
言語:
英語
請求記号:
N11479/202
資料種別:
国際会議録

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