1.

国際会議録
国際会議録
1. Double Gate 180V-128mA/mm SiC-MESFET for Power Switch Applications
Tournier, D. ; Vellvehi, M. ; Godignon, P. ; Jorda, X. ; Millan, J.
出版情報: Silicon carbide and related materials - 2005 : proceedings of the International Conference on Silicon Carbide and Related Materials - 2005 : Pittsburgh, Pennsylvania, USA : September 18-23 2005.  pp.1243-1246,  2006.  Stafa-Zuerich.  Trans Tech Publications
シリーズ名: Materials science forum
シリーズ巻号: 527-529
2.

国際会議録
国際会議録
2. Current Sensing for SiC Power Devices
Tournier, D. ; Vellvehi, M. ; Godignon, P. ; Montserrat, J. ; Planson, D. ; Sarrus, F.
出版情報: Silicon carbide and related materials - 2005 : proceedings of the International Conference on Silicon Carbide and Related Materials - 2005 : Pittsburgh, Pennsylvania, USA : September 18-23 2005.  pp.1215-1218,  2006.  Stafa-Zuerich.  Trans Tech Publications
シリーズ名: Materials science forum
シリーズ巻号: 527-529
3.

国際会議録
国際会議録
3. 4,5 kV-8 A SiC-Schottky Diodes / Si-IGBT Modules
Tournier, D. ; Waind, P. ; Godignon, P. ; Coulbeck, L. ; Millan, J. ; Bassett, R.
出版情報: Silicon carbide and related materials - 2005 : proceedings of the International Conference on Silicon Carbide and Related Materials - 2005 : Pittsburgh, Pennsylvania, USA : September 18-23 2005.  pp.1163-1166,  2006.  Stafa-Zuerich.  Trans Tech Publications
シリーズ名: Materials science forum
シリーズ巻号: 527-529
4.

国際会議録
国際会議録
4. Process Optimisation for <11-2> 4H-SiC MOSFET Applications
Blanc, C. ; Tournier, D. ; Godignon, P. ; Brink, D.J. ; Souliere, V. ; Camassel, J.
出版情報: Silicon carbide and related materials - 2005 : proceedings of the International Conference on Silicon Carbide and Related Materials - 2005 : Pittsburgh, Pennsylvania, USA : September 18-23 2005.  pp.1051-1054,  2006.  Stafa-Zuerich.  Trans Tech Publications
シリーズ名: Materials science forum
シリーズ巻号: 527-529
5.

国際会議録
国際会議録
5. Compatibility of VJFET Technology with MESFET Fabrication and Its Interest for System Integration: Fabrication of 6H and 4H-SiC 110 V Lateral MESFET
Tournier, D. ; Godignon, P. ; Montserrat, J. ; Planson, D. ; Chante, J.P. ; Sarrus, F.
出版情報: Silicon carbide and related materials 2001 : ICSCRM2001, proceedings of the International Conference on Silicon Carbide and Related Materials 2001, Tsukuba, Japan, October 28-November 2, 2001.  pp.1403-1406,  2002.  Zuerich, Switzerland.  Trans Tech Publications
シリーズ名: Materials science forum
シリーズ巻号: 389-393
6.

国際会議録
国際会議録
6. 4H-SiC MIS Structures Using Oxidized Ta2Si as High-k Dielectric
Perez-Tomas, A. ; Godignon, P. ; Mestres, N. ; Tournier, D. ; Montserrat, J. ; Millan, J.
出版情報: Silicon carbide 2004--materials, processing and devices : symposium held April 14-15, 2004, San Francisco, California, U.S.A..  pp.211-216,  2004.  Warrendale, Pa..  Materials Research Society
シリーズ名: Materials Research Society symposium proceedings
シリーズ巻号: 815
7.

国際会議録
国際会議録
7. Simulation Study of a Novel Current-Limiting Device: A Vertical α-SiC JFET - Controlled Current Limiter
Tournier, D. ; Godignon, P. ; Planson, D. ; Chante, J.P. ; Sarrus, F.
出版情報: Silicon carbide and related materials 2001 : ICSCRM2001, proceedings of the International Conference on Silicon Carbide and Related Materials 2001, Tsukuba, Japan, October 28-November 2, 2001.  pp.1243-1246,  2002.  Zuerich, Switzerland.  Trans Tech Publications
シリーズ名: Materials science forum
シリーズ巻号: 389-393
8.

国際会議録
国際会議録
8. Temperature Impact on High-Current 1.2kV SiC Schottky Rectifiers
Jorda, X. ; Tournier, D. ; Rebollo, J. ; Millan, J. ; Godignon, P.
出版情報: Silicon carbide and related materials 2004 : ECSCRM 2004 : proceedings of the 5th European Conference on Silicon Carbide and Related Materials, August 31 - September 4 2004, Bologna, Italy.  pp.929-932,  2005.  Uetikon-Zuerich.  Trans Tech Publications
シリーズ名: Materials science forum
シリーズ巻号: 483-485
9.

国際会議録
国際会議録
9. Temperature Dependence of 4H-SiC JBS and Schottky Diodes after High Temperature Treatment of Contact Metal
Perez, R. ; Mestres, N. ; Tournier, D. ; Jorda, X. ; Vellvehi, M. ; Godignon, P.
出版情報: Silicon carbide and related materials 2004 : ECSCRM 2004 : proceedings of the 5th European Conference on Silicon Carbide and Related Materials, August 31 - September 4 2004, Bologna, Italy.  pp.945-948,  2005.  Uetikon-Zuerich.  Trans Tech Publications
シリーズ名: Materials science forum
シリーズ巻号: 483-485
10.

国際会議録
国際会議録
10. 4H-SiC MOS Structures Fabricated from RTCVD Si Layers Oxidized in Diluted N2O
Perez-Tomas, A. ; Tournier, D. ; Godignon, P. ; Mestres, N. ; Millan, J.
出版情報: Silicon carbide and related materials 2004 : ECSCRM 2004 : proceedings of the 5th European Conference on Silicon Carbide and Related Materials, August 31 - September 4 2004, Bologna, Italy.  pp.673-676,  2005.  Uetikon-Zuerich.  Trans Tech Publications
シリーズ名: Materials science forum
シリーズ巻号: 483-485