1.

国際会議録
国際会議録
1. Comparison of Graphite and BN/AlN Annealing Caps for Ion Implanted SiC
K.A. Jones ; M.C. Wood ; T.S. Zheleva ; K.W. Kirchner ; M.A. Derenge ; A. Bolonikov ; T.S. Sudarshan ; R.D. Vispute ; S.S. Hullavarad ; S. Dhar
出版情報: Silicon carbide and related materials 2006 : ECSCRM 2006, Proceedings of the 6th European Conference on Silicon Carbide and Related Materials, Newcastle upon Tyne, UK, September 2006.  pp.575-578,  2007.  Stafa-Zuerich.  Trans Tech Publications
シリーズ名: Materials science forum
シリーズ巻号: 556-557
2.

国際会議録
国際会議録
2. Room Temperature Photoluminescence from 4H-SiC Epilayers: Non-Destructive Estimation of In-Grown Stacking Fault Density
S.U. Omar ; H.Z. Song ; T.S. Sudarshan ; M.V.S. Chandrashekhar
出版情報: Silicon carbide and related materials 2011 : selected, peer reviewed papers from the 14th International Conference on Silicon Carbide and Related Materials 2011 (ICSCRM 2011), September 11-16, 2011, Cleveland, Ohio, USA.  pp.399-402,  2012.  Aedermannsdorf, Switzerland.  Trans Tech Publications
シリーズ名: Materials science forum
シリーズ巻号: 717-720
3.

国際会議録
国際会議録
3. Investigation of Triangular Defects in 4H-SiC 4° Off Cut (0001) Si Face Epilayers Grown by CVD
A. Shrivastava ; P.G. Muzykov ; B. Pearman ; S.M. Angel ; T.S. Sudarshan
出版情報: Silicon carbide and related materials 2007 : selected peer reviewed papers from the International Conference on Silicon Carbide and Related Materials 2007, Otsu Prince Hotel Covention Hall, Lake Biwa Resort, Otsu, Japan, October 14-19, 2007.  pp.139-142,  2009.  Aedermannsdorf, Switzerland.  Trans Tech Publications
シリーズ名: Materials science forum
シリーズ巻号: 600-603
4.

国際会議録
国際会議録
4. Comparison of 4H Silicon Carbide Epitaxial Growths at Various Growth Pressures Using Dicholorosilane and Silane Gases
T. Rana ; H.Z. Song ; M.V.S. Chandrashekhar ; T.S. Sudarshan
出版情報: Silicon carbide and related materials 2011 : selected, peer reviewed papers from the 14th International Conference on Silicon Carbide and Related Materials 2011 (ICSCRM 2011), September 11-16, 2011, Cleveland, Ohio, USA.  pp.117-120,  2012.  Aedermannsdorf, Switzerland.  Trans Tech Publications
シリーズ名: Materials science forum
シリーズ巻号: 717-720
5.

国際会議録
国際会議録
5. Behavior of Particles in the Growth Reactor and their Effect on Silicon Carbide Epitaxial Growth
T. Rana ; H.Z. Song ; M.V.S. Chandrashekhar ; T.S. Sudarshan
出版情報: Silicon carbide and related materials 2011 : selected, peer reviewed papers from the 14th International Conference on Silicon Carbide and Related Materials 2011 (ICSCRM 2011), September 11-16, 2011, Cleveland, Ohio, USA.  pp.153-156,  2012.  Aedermannsdorf, Switzerland.  Trans Tech Publications
シリーズ名: Materials science forum
シリーズ巻号: 717-720
6.

国際会議録
国際会議録
6. In-Grown Stacking Faults in SiC-CVD Using Dichlorosilane and Propane as Precursors
H.Z. Song ; S.U. Omar ; T. Rana ; M.V.S. Chandrashekhar ; T.S. Sudarshan
出版情報: Silicon carbide and related materials 2011 : selected, peer reviewed papers from the 14th International Conference on Silicon Carbide and Related Materials 2011 (ICSCRM 2011), September 11-16, 2011, Cleveland, Ohio, USA.  pp.121-124,  2012.  Aedermannsdorf, Switzerland.  Trans Tech Publications
シリーズ名: Materials science forum
シリーズ巻号: 717-720
7.

国際会議録
国際会議録
7. Investigation of Basal Plane Dislocation Reduction/Elimination by Molten KOH-NaOH Eutectic Etching Method
H.Z. Song ; T.S. Sudarshan
出版情報: Silicon carbide and related materials 2011 : selected, peer reviewed papers from the 14th International Conference on Silicon Carbide and Related Materials 2011 (ICSCRM 2011), September 11-16, 2011, Cleveland, Ohio, USA.  pp.125-128,  2012.  Aedermannsdorf, Switzerland.  Trans Tech Publications
シリーズ名: Materials science forum
シリーズ巻号: 717-720
8.

国際会議録
国際会議録
8. Study of Epitaxial Graphene on Non-Polar 6H-SiC Faces
B.K. Daas ; K.M. Daniels ; S. Shetu ; T.S. Sudarshan ; M.V.S. Chandrashekhar
出版情報: Silicon carbide and related materials 2011 : selected, peer reviewed papers from the 14th International Conference on Silicon Carbide and Related Materials 2011 (ICSCRM 2011), September 11-16, 2011, Cleveland, Ohio, USA.  pp.633-636,  2012.  Aedermannsdorf, Switzerland.  Trans Tech Publications
シリーズ名: Materials science forum
シリーズ巻号: 717-720
9.

国際会議録
国際会議録
9. Two-Branch Boron Diffusion from Gas Phase in n-Type 4H-SiC
A.V. Bolotnikov ; P.G. Muzykov ; A. Agarwal ; Q.C. Zhang ; T.S. Sudarshan
出版情報: Silicon carbide and related materials 2008 : selected peer reviewed papers from the 7th European Conference on Silicon Carbide and Related Materials, September 7-11 Barcelona, Spain.  pp.453-456,  2009.  Aedermannsdorf, Switzerland.  Trans Tech Publications
シリーズ名: Materials science forum
シリーズ巻号: 615-617
10.

国際会議録
国際会議録
10. Effect of C/Si Ratio and Nitrogen Doping on 4H-SiC Epitaxial Growth Using Dichlorosilane Precursor
H.Z. Song ; M.V.S. Chandrashekhar ; T.S. Sudarshan
出版情報: Silicon Carbide and Related Materials 2014 : Selected peer reviewed papers from the European Conference on Silicon Carbide & Related Materials (ECSCRM 2014), September 21-25, 2014, Grenoble, France.  pp.129-132,  2015.  Aedermannsdorf, Switzerland.  Trans Tech Publications
シリーズ名: Materials science forum
シリーズ巻号: 821-823