1.

国際会議録
国際会議録
1. Electrical Characterization of the Graphene-SiC Heterojunction
T.J. Anderson ; K.D. Hobart ; L.O. Nyakiti ; V.D. Wheeler ; R.L. Myers-Ward
出版情報: Silicon carbide and related materials 2011 : selected, peer reviewed papers from the 14th International Conference on Silicon Carbide and Related Materials 2011 (ICSCRM 2011), September 11-16, 2011, Cleveland, Ohio, USA.  pp.641-644,  2012.  Aedermannsdorf, Switzerland.  Trans Tech Publications
シリーズ名: Materials science forum
シリーズ巻号: 717-720
2.

国際会議録
国際会議録
2. InN Nanostructured Materials: Controlled Synthesis, Characterizations, and Applications
J. Mangum ; O. Kryliouk ; H.J. Park ; T.J. Anderson ; Z. Liliental-Weber
出版情報: 2007 International Conference on Semiconductor Technology for Ultra Large Scale Integrated Circuits and Thin Film Transistors (ULSIC vs. TFT).  pp.131-136,  2007.  Pennington, N.J..  Electrochemical Society
シリーズ名: ECS transactions
シリーズ巻号: 8(1)
3.

国際会議録
国際会議録
3. Techniques for the Dry Transfer of Epitaxial Graphene onto Arbitrary Substrates
J.D. Caldwell ; T.J. Anderson ; K.D. Hobart ; J.C. Culbertson ; G.G. Jernigan
出版情報: Silicon carbide and related materials 2009 : selected peer reviewed papers from the International Conference on Silicon Carbide and Related Materials 2009, Nurnberg, Germany, October 11-16, 2009.  pp.633-636,  2010.  Aedermannsdorf, Switzerland.  Trans Tech Publications
シリーズ名: Materials science forum
シリーズ巻号: 645-648
4.

国際会議録
国際会議録
4. Comparative Study of Ohmic Contact Metallizations to Nanocrystalline Diamond Films
M.J. Tadjer ; T.J. Anderson ; K.D. Hobart ; T.I. Feygelson ; J.E. Butler
出版情報: Silicon carbide and related materials 2009 : selected peer reviewed papers from the International Conference on Silicon Carbide and Related Materials 2009, Nurnberg, Germany, October 11-16, 2009.  pp.733-736,  2010.  Aedermannsdorf, Switzerland.  Trans Tech Publications
シリーズ名: Materials science forum
シリーズ巻号: 645-648
5.

国際会議録
国際会議録
5. Effect of Temperature and Al Concentration on the Electrical Performance of GaN and Al0.2Ga0.8N Accumulation-Mode FET Devices
M.J. Tadjer ; K.D. Hobart ; M.A. Mastro ; T.J. Anderson ; E.A. Imhoff
出版情報: Silicon carbide and related materials 2009 : selected peer reviewed papers from the International Conference on Silicon Carbide and Related Materials 2009, Nurnberg, Germany, October 11-16, 2009.  pp.1215-1218,  2010.  Aedermannsdorf, Switzerland.  Trans Tech Publications
シリーズ名: Materials science forum
シリーズ巻号: 645-648
6.

国際会議録
国際会議録
6. Wireless Hydrogen Sensor Networks Using AlGaN/GaN High Electron Mobility Transistor Based Differential Diodes Sensor
X. Yu ; C. Li ; Z. Low ; J. Lin ; T.J. Anderson
出版情報: State-of-the-Art Program on Compound Semiconductors 49 (SOTAPOCS 49) and Nitrides and Wide-Bandgap Semiconductors for Sensors, Photonics, and Electronics 9.  pp.127-137,  2008.  Pennington, NJ.  Electrochemical Society
シリーズ名: ECS transactions
シリーズ巻号: 16(7)