1.

国際会議録
国際会議録
1. Metallic Impurities in Mono and Multi-crystalline Silicon and Their Gettering by Phosphorus Diffusion
M.B. Shabani ; T. Yamashita ; E. Morita
出版情報: High Purity Silicon 10.  pp.179-193,  2008.  Pennington, N.J..  Electrochemical Society
シリーズ名: ECS transactions
シリーズ巻号: 16(6)
2.

国際会議録
国際会議録
2. Artificial Retina using Thin-Film Photodiode and Thin-Film Transistor
M. Kimura ; T. Shima ; T. Yamashita
出版情報: Thin Film Transistor Technology 8.  pp.325-331,  2006.  Pennington, N.J..  Electrochemical Society
シリーズ名: ECS transactions
シリーズ巻号: 3(8)
3.

国際会議録
国際会議録
3. Starting Point of Step-Bunching Defects on 4H-SiC Si-Face Substrates
K. Tamura ; M. Sasaki ; C. Kudou ; T. Yamashita ; H. Sako
出版情報: Silicon Carbide and Related Materials 2014 : Selected peer reviewed papers from the European Conference on Silicon Carbide & Related Materials (ECSCRM 2014), September 21-25, 2014, Grenoble, France.  pp.367-370,  2015.  Aedermannsdorf, Switzerland.  Trans Tech Publications
シリーズ名: Materials science forum
シリーズ巻号: 821-823
4.

国際会議録
国際会議録
4. Characterization of Triangular-Defects in 4° off 4H-SiC Epitaxial Wafers by Synchrotron X-Ray Topography and by Transmission Electron Microscopy
T. Yamashita ; K. Momose ; D. Muto ; Y. Shimodaira ; K. Yamatake
出版情報: Silicon carbide and related materials 2011 : selected, peer reviewed papers from the 14th International Conference on Silicon Carbide and Related Materials 2011 (ICSCRM 2011), September 11-16, 2011, Cleveland, Ohio, USA.  pp.363-366,  2012.  Aedermannsdorf, Switzerland.  Trans Tech Publications
シリーズ名: Materials science forum
シリーズ巻号: 717-720
5.

国際会議録
国際会議録
5. Characterization of Comet-Shaped Defects on C-Face 4H-SiC Epitaxial Wafers
T. Yamashita ; H. Matsuhata ; T. Sekiguchi ; K. Momose ; H. Osawa
出版情報: Silicon Carbide and Related Materials 2014 : Selected peer reviewed papers from the European Conference on Silicon Carbide & Related Materials (ECSCRM 2014), September 21-25, 2014, Grenoble, France.  pp.173-176,  2015.  Aedermannsdorf, Switzerland.  Trans Tech Publications
シリーズ名: Materials science forum
シリーズ巻号: 821-823
6.

国際会議録
国際会議録
6. An Application of the Two-Fluid Cycle to a Nuclear Power Plant
T. Yamashita ; T. Fujii ; N. Takenaka ; K. Sugimoto
出版情報: Safety, reliability, and plant evaluations, student program : presented at 8th International Conference on Nuclear Engineering, Baltimore, Maryland, April 2-6, 2000.  5  pp.819-822,  2000.  New York.  American Society of Mechanical Engineers
シリーズ名: ASME Symposia Volumes
シリーズ巻号: ICONE 8(5)
7.

国際会議録
国際会議録
7. Microstructural Analysis of Damaged Layer Introduced during Chemo-Mechanical Polishing
H. Sako ; T. Yamashita ; K. Tamura ; M. Sasaki ; M. Nagaya
出版情報: Silicon carbide and related materials 2013 : selected, peer reviewed papers from the 15th International Conference on Silicon Carbide and Related Materials (ICSCRM 2013), September 29 - October 4, 2013, Miyazaki, Japan.  pp.370-373,  2014.  Aedermannsdorf, Switzerland.  Trans Tech Publications
シリーズ名: Materials science forum
シリーズ巻号: 778-780
8.

国際会議録
国際会議録
8. Origin Analyses of Trapezoid-Shape Defects in 4-Deg.-off 4H-SiC Epitaxial Wafers by Synchrotron X-Ray Topography
T. Yamashita ; H. Matsuhata ; Y. Miyasaka ; K. Momose ; T. Sato
出版情報: Silicon carbide and related materials 2013 : selected, peer reviewed papers from the 15th International Conference on Silicon Carbide and Related Materials (ICSCRM 2013), September 29 - October 4, 2013, Miyazaki, Japan.  pp.374-377,  2014.  Aedermannsdorf, Switzerland.  Trans Tech Publications
シリーズ名: Materials science forum
シリーズ巻号: 778-780
9.

国際会議録
国際会議録
9. Defects Grouping and Characterizations of PL-Imaging Methods for 4H-SiC Epitaxial Layers
M. Odawara ; K. Kamei ; Y. Miyasaka ; T. Yamashita ; S. Takahashi
出版情報: Silicon carbide and related materials 2013 : selected, peer reviewed papers from the 15th International Conference on Silicon Carbide and Related Materials (ICSCRM 2013), September 29 - October 4, 2013, Miyazaki, Japan.  pp.382-385,  2014.  Aedermannsdorf, Switzerland.  Trans Tech Publications
シリーズ名: Materials science forum
シリーズ巻号: 778-780
10.

国際会議録
国際会議録
10. Reliability of Gate Oxides on 4H-SiC Epitaxial Surface Planarized by CMP Treatment
K. Yamada ; O. Ishiyama ; K. Tamura ; T. Yamashita ; A. Shimozato
出版情報: Silicon carbide and related materials 2013 : selected, peer reviewed papers from the 15th International Conference on Silicon Carbide and Related Materials (ICSCRM 2013), September 29 - October 4, 2013, Miyazaki, Japan.  pp.545-548,  2014.  Aedermannsdorf, Switzerland.  Trans Tech Publications
シリーズ名: Materials science forum
シリーズ巻号: 778-780