1.

国際会議録
国際会議録
1. Wettability of Basal and Prismatic Plane of Graphite by Molten Aluminum-Magnesium Alloy
M. Yoshida ; T. Matsunaga ; K. Ogata ; T. Hatayama ; K. Shinozaki
出版情報: THERMEC 2006 : supplement to THERMEC 2006, 5th International conference on processing and manufacturing of advanced materials, July 4-8, 2006, Vancouver, Canad.  539-543  pp.877-882,  2007.  Stafa-Zuerich.  Trans Tech Publications
シリーズ名: Materials science forum
シリーズ巻号: 539-543(1)
2.

国際会議録
国際会議録
2. Modification of SiO2/4H-SiC Interface Properties by High-Pressure H2O Vapor Annealing
D. Takeda ; H. Yano ; T. Hatayama ; Y. Uraoka ; T. Fuyuki
出版情報: Silicon carbide and related materials 2006 : ECSCRM 2006, Proceedings of the 6th European Conference on Silicon Carbide and Related Materials, Newcastle upon Tyne, UK, September 2006.  pp.663-666,  2007.  Stafa-Zuerich.  Trans Tech Publications
シリーズ名: Materials science forum
シリーズ巻号: 556-557
3.

国際会議録
国際会議録
3. Sloped Sidewalls in 4H-SiC Mesa Structure Formed by a Cl2-O2 Thermal Etching
S. Takenami ; T. Hatayama ; H. Yano ; Y. Uraoka ; T. Fuyuki
出版情報: Silicon carbide and related materials 2006 : ECSCRM 2006, Proceedings of the 6th European Conference on Silicon Carbide and Related Materials, Newcastle upon Tyne, UK, September 2006.  pp.733-736,  2007.  Stafa-Zuerich.  Trans Tech Publications
シリーズ名: Materials science forum
シリーズ巻号: 556-557
4.

国際会議録
国際会議録
4. Improved Stability of 4H-SiC MOS Device Properties by Combination of NO and POCl3 Annealing
H. Yano ; T. Araoka ; T. Hatayama ; T. Fuyuki
出版情報: Silicon carbide and related materials 2012 : selected, peer reviewed papers from the 9th European Conference on Silicon Carbide and Related Materials (ECSCRM 2012), September 2-6,2012, St. Petersburg, Russian Federation.  pp.727-732,  2013.  Aedermannsdorf, Switzerland.  Trans Tech Publications
シリーズ名: Materials science forum
シリーズ巻号: 740-742
5.

国際会議録
国際会議録
5. Effect of Interfacial Localization of Phosphorus on Electrical Properties and Reliability of 4H-SiC MOS Devices
T. Akagi ; H. Yano ; T. Hatayama ; T. Fuyuki
出版情報: Silicon carbide and related materials 2012 : selected, peer reviewed papers from the 9th European Conference on Silicon Carbide and Related Materials (ECSCRM 2012), September 2-6,2012, St. Petersburg, Russian Federation.  pp.695-698,  2013.  Aedermannsdorf, Switzerland.  Trans Tech Publications
シリーズ名: Materials science forum
シリーズ巻号: 740-742
6.

国際会議録
国際会議録
6. Crystallization of Double-Layered Silicon Thin Films by Solid Green Laser Annealing and Its Application to Low Temperature poly-Si Thin Film Transistors
Y. Sugawara ; Y. Uraoka ; H. Yano ; T. Hatayama ; T. Fuyuki
出版情報: Thin Film Transistor Technology 8.  pp.173-178,  2006.  Pennington, N.J..  Electrochemical Society
シリーズ名: ECS transactions
シリーズ巻号: 3(8)
7.

国際会議録
国際会議録
7. Photoluminescence of 8H-SiC
A. Henry ; I.G. Ivanov ; E. Janzén ; T. Hatayama ; H. Yano
出版情報: Silicon carbide and related materials 2012 : selected, peer reviewed papers from the 9th European Conference on Silicon Carbide and Related Materials (ECSCRM 2012), September 2-6,2012, St. Petersburg, Russian Federation.  pp.347-350,  2013.  Aedermannsdorf, Switzerland.  Trans Tech Publications
シリーズ名: Materials science forum
シリーズ巻号: 740-742
8.

国際会議録
国際会議録
8. Deep Levels in P-Type 4H-SiC Induced by Low-Energy Electron Irradiation
K. Yoshihara ; M. Kato ; M. Ichimura ; T. Hatayama ; T. Ohshima
出版情報: Silicon carbide and related materials 2012 : selected, peer reviewed papers from the 9th European Conference on Silicon Carbide and Related Materials (ECSCRM 2012), September 2-6,2012, St. Petersburg, Russian Federation.  pp.373-376,  2013.  Aedermannsdorf, Switzerland.  Trans Tech Publications
シリーズ名: Materials science forum
シリーズ巻号: 740-742
9.

国際会議録
国際会議録
9. Photoluminescence of 10H-SiC
A. Henry ; H. Yano ; T. Hatayama
出版情報: Silicon Carbide and Related Materials 2015 : [ICSCRM 2015] : selected, peer reviewed papers from the 16th International Conference on Silicon Carbide and Related Materials, October 4-9, 2015, Giardini Naxos, Italy.  pp.269-273,  2016.  Aedermannsdorf, Switzerland.  Trans Tech Publications
シリーズ名: Materials science forum
シリーズ巻号: 858
10.

国際会議録
国際会議録
10. Clearance of 4H-SiC Sub-Trench in Hot Chlorine Treatment
H. Koketsu ; T. Hatayama ; H. Yano ; T. Fuyuki
出版情報: Silicon carbide and related materials 2011 : selected, peer reviewed papers from the 14th International Conference on Silicon Carbide and Related Materials 2011 (ICSCRM 2011), September 11-16, 2011, Cleveland, Ohio, USA.  pp.881-884,  2012.  Aedermannsdorf, Switzerland.  Trans Tech Publications
シリーズ名: Materials science forum
シリーズ巻号: 717-720