1.

国際会議録
国際会議録
1. Four Current Examples of Characterization of Silicon Carbide
Bai, S. ; Ke, Yue ; Shishkin, Y. ; Shigiltchoff, O. ; Devaty, R.P. ; Choyke, W.J. ; Strauch, D. ; Stojetz, B. ; Dorner, B. ; Hobgood, D. ; Serrano, J. ; Cardona, M. ; Nagasawa, H. ; Kimoto, T. ; Porter, L.M.
出版情報: Silicon carbide 2002 -- materials, processing and devices : symposium held December 2-4, 2002, Boston, Massachusetts, U.S.A..  pp.151-162,  2003.  Warrendale, Pa..  Materials Research Society
シリーズ名: Materials Research Society symposium proceedings
シリーズ巻号: 742
2.

国際会議録
国際会議録
2. Schottky Barriers for Pt on 6H- and 4H-SiC (0001), (000-1), (1-100) and (1-210) Faces Measured by I-V, C-V and Internal Photoemission
Shigiltchoff, O. ; Kimoto, T. ; Hobgood, D. ; Neudeck, P.G. ; Porter, L.M. ; Devaty, R.P. ; Choyke, W.J.
出版情報: Silicon carbide and related materials 2001 : ICSCRM2001, proceedings of the International Conference on Silicon Carbide and Related Materials 2001, Tsukuba, Japan, October 28-November 2, 2001.  pp.921-924,  2002.  Zuerich, Switzerland.  Trans Tech Publications
シリーズ名: Materials science forum
シリーズ巻号: 389-393
3.

国際会議録
国際会議録
3. Absorption Bands Associated with Conduction Bands and Impurity States in 4H and 6H SiC
Sridhara, S. G. ; Bai, S. ; Shigiltchoff, O. ; Devaty, R. P. ; Choyke, W. J.
出版情報: Silicon carbide and related materials - 1999 : ICSCRM'99, proceedings of the International Conference on Silicon Carbide and Related Materials - 1999, Research Triangle Park, North Carolina, USA, October 10-15, 1999.  pp.551-554,  2000.  Zuerich, Switzerland.  Trans Tech Publications
シリーズ名: Materials science forum
シリーズ巻号: 338-342(1)
4.

国際会議録
国際会議録
4. Differential Absorption Measurement of Valence Band Splittings in 4H SiC
Sridhara, S. G. ; Bai, S. ; Shigiltchoff, O. ; Devaty, R. P. ; Choyke, W. J.
出版情報: Silicon carbide and related materials - 1999 : ICSCRM'99, proceedings of the International Conference on Silicon Carbide and Related Materials - 1999, Research Triangle Park, North Carolina, USA, October 10-15, 1999.  pp.567-570,  2000.  Zuerich, Switzerland.  Trans Tech Publications
シリーズ名: Materials science forum
シリーズ巻号: 338-342(1)
5.

国際会議録
国際会議録
5. Schottky Barriers for Pt on 6H- and 4H-SiC (0001), (000-1), (1-100) and (1-210) Faces Measured by I-V, C-V and Internal Photoemission
Shigiltchoff, O. ; Kimoto, T. ; Hobgood, D. ; Neudeck, P.G. ; Porter, L.M. ; Devaty, R.P. ; Choyke, W.J.
出版情報: Silicon carbide and related materials 2001 : ICSCRM2001, proceedings of the International Conference on Silicon Carbide and Related Materials 2001, Tsukuba, Japan, October 28-November 2, 2001.  pp.921-924,  2002.  Zuerich, Switzerland.  Trans Tech Publications
シリーズ名: Materials science forum
シリーズ巻号: 389-393
6.

国際会議録
国際会議録
6. Structural Properties of GaN films Grown by Molecular Beam Epitaxy on Vicinal SiC(0001)
Lee, C.D. ; Feenstra, R.M. ; Shigiltchoff, O. ; Devaty, R.P. ; Choyke, W.J.
出版情報: GaN and related alloys - 2001 : symposium held November 26-30, 2001, Boston, Massachusetts, U.S.A..  pp.189-194,  2002.  Warrendale, Pa..  Materials Research Society
シリーズ名: Materials Research Society symposium proceedings
シリーズ巻号: 693
7.

国際会議録
国際会議録
7. Schottky Barriers for Pt, Mo and Ti on 6H and 4H SiC (0001), (000-1), (1-100) and (1-210) Faces Measured by I-V, C-V and Internal Photoemission
Shigiltchoff, O. ; Bai, S. ; Devaty, R.P. ; Choyke, W.J. ; Kimoto, T. ; Hobgood, D. ; Neudeck, P.G. ; Porter, L.M.
出版情報: Silicon carbide and related materials 2002 : ECSCRM2002, proceedings of the 4th European Conference on Silicon Carbide and Related Materials, September 2-5, 2002, Linköping, Sweden.  pp.705-708,  2003.  Zuerich, Switzerland.  Trans Tech Publications
シリーズ名: Materials science forum
シリーズ巻号: 433-436