1.

国際会議録
国際会議録
1. Investigation of Thermal Annealing Processes on the Activation of Mg Acceptors and the Structural Quality of GaN
Schineller,B. ; Guttzeit,A. ; Schon,O. ; Heuken,M. ; Heime,K. ; Beccard,R.
出版情報: Silicon carbide, III-nitrides and related materials, ICSCIII-N'97 : proceedings of the International Conference on Silicon Carbide, III-Nitrides and Related Materials, Stockholm, Sweden, September 1997.  Part2  pp.1397-1400,  1998.  Zuerich, Switzerland.  Trans Tech Publications
シリーズ名: Materials science forum
シリーズ巻号: 264-268
2.

国際会議録
国際会議録
2. Silicon as a substrate in multiwafer MOVPE GaN technology
Alam,A. ; Schineller,B. ; Protzmann,H. ; Lunenburger,M. ; Heuken,M. ; Bremser,M.D. ; Woelk,E. ; Dadgar,A. ; Krost,A.
出版情報: Light-Emitting Diodes: Research, Manufacturing, and Applications V.  pp.158-164,  2001.  Bellingham, Wash..  SPIE-The International Society for Optical Engineering
シリーズ名: Proceedings of SPIE - the International Society for Optical Engineering
シリーズ巻号: 4278