1.

国際会議録
国際会議録
1. Highly efficient InGaN/GaN MQW for blue- and green-light-emitting structures grown in production MOVPE reactors
Bremser,M.D. ; Luenenbuerger,M. ; Protzmann,H. ; Heuken,M.
出版情報: Light-emitting diodes : research, manufacturing, and applications IV : 26-27 January 2000, San Jose, California.  pp.100-104,  2000.  Bellingham, Wash..  SPIE - The International Society for Optical Engineering
シリーズ名: Proceedings of SPIE - the International Society for Optical Engineering
シリーズ巻号: 3938
2.

国際会議録
国際会議録
2. Silicon as a substrate in multiwafer MOVPE GaN technology
Alam,A. ; Schineller,B. ; Protzmann,H. ; Lunenburger,M. ; Heuken,M. ; Bremser,M.D. ; Woelk,E. ; Dadgar,A. ; Krost,A.
出版情報: Light-Emitting Diodes: Research, Manufacturing, and Applications V.  pp.158-164,  2001.  Bellingham, Wash..  SPIE-The International Society for Optical Engineering
シリーズ名: Proceedings of SPIE - the International Society for Optical Engineering
シリーズ巻号: 4278
3.

国際会議録
国際会議録
3. MOCVD technology for the production of highly efficient GaAIP/GaAs/Ge solar cells
Beccard,R. ; Protzmann,H. ; Schmitz,D.A. ; Strauch,C. ; Heuken,M. ; Juergensen
出版情報: Optoelectronic Materials and Devices.  pp.70-77,  1998.  Bellingham, Wash..  SPIE-The International Society for Optical Engineering
シリーズ名: Proceedings of SPIE - the International Society for Optical Engineering
シリーズ巻号: 3419