1.

国際会議録
国際会議録
1. High-Temperature (up to 800 K) Operation of 6-kV 4F-SiC Junction Diodes
Levinshtein, M.E. ; Ivanov, P.A. ; Boltovets, M.S. ; Krivutsa, V.A. ; Palmour, J.W. ; Das, M.K. ; Hull, B.A.
出版情報: Silicon carbide and related materials - 2005 : proceedings of the International Conference on Silicon Carbide and Related Materials - 2005 : Pittsburgh, Pennsylvania, USA : September 18-23 2005.  pp.1339-1342,  2006.  Stafa-Zuerich.  Trans Tech Publications
シリーズ名: Materials science forum
シリーズ巻号: 527-529
2.

国際会議録
国際会議録
2. 400 Watt Boost Converter Utilizing Silicon Carbide Power Devices and Operating at 200oC Baseplate Temperature
Richmond, J. ; Ryu, S.H. ; Krishnaswami, S. ; Agarwal, A.K. ; Palmour, J.W. ; Geil, B.R. ; Katsis, D. ; Scozzie, C.J.
出版情報: Silicon carbide and related materials - 2005 : proceedings of the International Conference on Silicon Carbide and Related Materials - 2005 : Pittsburgh, Pennsylvania, USA : September 18-23 2005.  pp.1445-1448,  2006.  Stafa-Zuerich.  Trans Tech Publications
シリーズ名: Materials science forum
シリーズ巻号: 527-529
3.

国際会議録
国際会議録
3. Analysis of the Effect of Temperature on Base Current Gain in Power 4H-SiC BJTs
Ivanov, P.A. ; Levinshtein, M.E. ; Agarwal, A.K. ; Krishnaswami, S. ; Palmour, J.W.
出版情報: Silicon carbide and related materials - 2005 : proceedings of the International Conference on Silicon Carbide and Related Materials - 2005 : Pittsburgh, Pennsylvania, USA : September 18-23 2005.  pp.1441-1444,  2006.  Stafa-Zuerich.  Trans Tech Publications
シリーズ名: Materials science forum
シリーズ巻号: 527-529
4.

国際会議録
国際会議録
4. High Temperature Characterization of 4H-SiC Bipolar Junction Transistors
Krishnaswami, S. ; Agarwal, A.K. ; Richmond, J. ; Capell, C. ; Ryu, S.H. ; Palmour, J.W. ; Geil, B.R. ; Katsis, D. ; Scozzie, C.J.
出版情報: Silicon carbide and related materials - 2005 : proceedings of the International Conference on Silicon Carbide and Related Materials - 2005 : Pittsburgh, Pennsylvania, USA : September 18-23 2005.  pp.1437-1440,  2006.  Stafa-Zuerich.  Trans Tech Publications
シリーズ名: Materials science forum
シリーズ巻号: 527-529
5.

国際会議録
国際会議録
5. First Demonstration of 2.1 kW Output Power at 425 MH2 Using 4H-SiC RF Power BJTs
Agarwal, A.K ; Husna, F. ; Haley, J. ; Bartlow, H. ; McCalpin, B. ; Krishnaswami, S. ; Capell, C. ; Ryu, S.H. ; Palmour, J.W.
出版情報: Silicon carbide and related materials - 2005 : proceedings of the International Conference on Silicon Carbide and Related Materials - 2005 : Pittsburgh, Pennsylvania, USA : September 18-23 2005.  pp.1413-1416,  2006.  Stafa-Zuerich.  Trans Tech Publications
シリーズ名: Materials science forum
シリーズ巻号: 527-529
6.

国際会議録
国際会議録
6. A 1cm x 1cm, 5kV, 100A, 4H-SiC Thyristor Chip for High Current Modules
Agarwal, A.K. ; Krishnaswami, S. ; Damsky, B. ; Richmond, J. ; Capell, C. ; Ryu, S.H. ; Palmour, J.W.
出版情報: Silicon carbide and related materials - 2005 : proceedings of the International Conference on Silicon Carbide and Related Materials - 2005 : Pittsburgh, Pennsylvania, USA : September 18-23 2005.  pp.1397-1400,  2006.  Stafa-Zuerich.  Trans Tech Publications
シリーズ名: Materials science forum
シリーズ巻号: 527-529
7.

国際会議録
国際会議録
7. Simulations of 10 kV Trench Gate IGBTs on 4H-SiC
Zhang, Q.C. ; Ryu, S.H. ; Jonas, C. ; Agarwal, A.K. ; Palmour, J.W.
出版情報: Silicon carbide and related materials - 2005 : proceedings of the International Conference on Silicon Carbide and Related Materials - 2005 : Pittsburgh, Pennsylvania, USA : September 18-23 2005.  pp.1405-1408,  2006.  Stafa-Zuerich.  Trans Tech Publications
シリーズ名: Materials science forum
シリーズ巻号: 527-529
8.

国際会議録
国際会議録
8. Energy Efficiency: The Commercial Pull for SiC Devices
Palmour, J.W.
出版情報: Silicon carbide and related materials - 2005 : proceedings of the International Conference on Silicon Carbide and Related Materials - 2005 : Pittsburgh, Pennsylvania, USA : September 18-23 2005.  pp.1129-1134,  2006.  Stafa-Zuerich.  Trans Tech Publications
シリーズ名: Materials science forum
シリーズ巻号: 527-529
9.

国際会議録
国際会議録
9. Techniques for Minimizing the Basal Plane Dislocation Density in SiC Epilayers to Reduce Vf Drift in SiC Bipolar Power Devices
Sumakeris, J.J. ; Bergman, J.P. ; Das, M.K. ; Hallin, C. ; Hull, B.A. ; Janzen, E. ; Lendenmann, H. ; O'Loughlin, M.J. ; Paisley, M.J. ; Ha, S. ; Skowronski, M. ; Palmour, J.W. ; Carter, C.H.,Jr
出版情報: Silicon carbide and related materials - 2005 : proceedings of the International Conference on Silicon Carbide and Related Materials - 2005 : Pittsburgh, Pennsylvania, USA : September 18-23 2005.  pp.141-146,  2006.  Stafa-Zuerich.  Trans Tech Publications
シリーズ名: Materials science forum
シリーズ巻号: 527-529
10.

国際会議録
国際会議録
10. *EPITAXIAL THIN FILM GROWTH AND DEVICE DEVELOPMENT IN MONOCRYSTALLINE ALPHA AND BETA SILICON CARBIDE
Davis, Robert F. ; Palmour, J.W. ; Edmond, J.A.
出版情報: Diamond, silicon carbide, and related wide bandgap semiconductors : symposium held November 27-December 1, 1989, Boston, Massachusetts, U.S.A..  pp.463-474,  1990.  Pittsburgh, Pa..  Materials Research Society
シリーズ名: Materials Research Society symposium proceedings
シリーズ巻号: 162