1.

国際会議録
国際会議録
1. Short-Period AlGaN Based Superlattices for Deep UV Light Emitting Diodes Grown By Gas Source Molecular Beam Epitaxy
Nikishin, S. A. ; Borisov, B. A. ; Kuryatkov, V. V. ; Holtz, M. ; Temkin, H.
出版情報: GaN, AlN, InN and related materials : symposium held November 28-December 2, 2005, Boston, Massachusetts, U.S.A..  pp.13-18,  2006.  Warrendale, Pa..  Materials Research Society
シリーズ名: Materials Research Society symposium proceedings
シリーズ巻号: 892
2.

国際会議録
国際会議録
2. Deep UV Light Emitting Diodes Based on Short Period Superlattices of AlN/AlGaN
Temkin, H. ; Nikishin, S. A. ; Holtz, M. ; Chernyak, L.
出版情報: Proceedings of the Fourth International Symposium on Process Physics and Modeling in Semiconductor Technology.  pp.3-8,  2004.  Pennington, NJ.  Electrochemical Society
シリーズ名: Electrochemical Society Proceedings Series
シリーズ巻号: 2004-02
3.

国際会議録
国際会議録
3. X-ray diffraction study of chalcopyrite ZnSnP2 epitaxial layers
Francoeur, S. ; Seryogin, G. A. ; Nikishin, S. A. ; Temkin, H.
出版情報: Self-organized processes in semiconductor alloys : symposium held November 29-December 2, 1999 Boston, Massachusetts, U.S.A..  pp.277-,  2000.  Warrendale, Pa..  MRS-Materials Research Society
シリーズ名: Materials Research Society symposium proceedings
シリーズ巻号: 583
4.

国際会議録
国際会議録
4. In Situ Pyrometric Interferometry for Molecular Beam Epitaxy of AlxGa1-xN on Si (111)
Nikishin, S. A. ; Francoeur, S. ; Temkin, H.
出版情報: GaN and related alloys - 2000 : symposium held November 27-December 1, 2000, Boston, Massachusetts, U.S.A..  2001.  Warrendale, Pa..  Materials Research Society
シリーズ名: Materials Research Society symposium proceedings
シリーズ巻号: 639
5.

国際会議録
国際会議録
5. Dielectric function of AlN grown on Si(111) by MBE
Zollner, S. ; Konkar, A. ; Gregory, R. B. ; Wilson, S. R. ; Nikishin, S. A. ; Temkin, H.
出版情報: Wide-bandgap semiconductors for high-power, high-frequency, and high temperature applications--1999 : symposium held April 5-8, 1999, San Francisco, California, U.S.A..  pp.231-,  1999.  Warrendale, PA.  MRS-Materials Research Society
シリーズ名: Materials Research Society symposium proceedings
シリーズ巻号: 572
6.

国際会議録
国際会議録
6. High-quality AlN and GaN grown on Si(111) by gas source molecular beam epitaxy with ammonia
Nikishin, S. A. ; Faleev, N. N. ; Antipov, V. G. ; Francoeur, S. ; Peralta, L. Grave de ; Seryogin, G. A. ; Holtz, M. ; Prokofyeva, T. I. ; Chu, S. N. G. ; Zubrilov, A. S. ; Elyukhin, V. A. ; Nikitina, I. P. ; Nikolaev, A. ; Melnik, Y. ; Dmitriev, V. ; Temkin, H.
出版情報: GaN and related alloys - 1999 : symposium held November 28-December 3, 1999, Boston, Massachusetts, U.S.A..  pp.W8.3.1-,  2000.  Warrendale, Pa..  MRS-Materials Research Society
シリーズ名: Materials Research Society symposium proceedings
シリーズ巻号: 595