1.

国際会議録
国際会議録
1. Mechanisms of Nitrogen Incorporation at 4H-SiC/SiO2 Interface during Nitric Oxide Passivation - A First Principles Study
D.P. Ettisserry ; N. Goldsman ; A. Akturk ; A.J. Lelis
出版情報: Silicon Carbide and Related Materials 2015 : [ICSCRM 2015] : selected, peer reviewed papers from the 16th International Conference on Silicon Carbide and Related Materials, October 4-9, 2015, Giardini Naxos, Italy.  pp.465-468,  2016.  Aedermannsdorf, Switzerland.  Trans Tech Publications
シリーズ名: Materials science forum
シリーズ巻号: 858
2.

国際会議録
国際会議録
2. Simulating the Influence of Mobile Ionic Oxide Charge on SiC MOS Bias-Temperature Instability Measurements
D.B. Habersat ; N. Goldsman ; A.J. Lelis
出版情報: Silicon Carbide and Related Materials 2014 : Selected peer reviewed papers from the European Conference on Silicon Carbide & Related Materials (ECSCRM 2014), September 21-25, 2014, Grenoble, France.  pp.697-700,  2015.  Aedermannsdorf, Switzerland.  Trans Tech Publications
シリーズ名: Materials science forum
シリーズ巻号: 821-823
3.

国際会議録
国際会議録
3. Two-Way Tunneling Model of Oxide Trap Charging and Discharging in SiC MOSFETs
A.J. Lelis ; D.B. Habersat ; R. Green ; N. Goldsman
出版情報: Silicon carbide and related materials 2011 : selected, peer reviewed papers from the 14th International Conference on Silicon Carbide and Related Materials 2011 (ICSCRM 2011), September 11-16, 2011, Cleveland, Ohio, USA.  pp.465-468,  2012.  Aedermannsdorf, Switzerland.  Trans Tech Publications
シリーズ名: Materials science forum
シリーズ巻号: 717-720
4.

国際会議録
国際会議録
4. Silicon Carbide-Silicon Dioxide Transition Layer Mobility
S. Salemi ; A. Akturk ; S. Potbhare ; A.J. Lelis ; N. Goldsman
出版情報: Silicon carbide and related materials 2011 : selected, peer reviewed papers from the 14th International Conference on Silicon Carbide and Related Materials 2011 (ICSCRM 2011), September 11-16, 2011, Cleveland, Ohio, USA.  pp.449-452,  2012.  Aedermannsdorf, Switzerland.  Trans Tech Publications
シリーズ名: Materials science forum
シリーズ巻号: 717-720
5.

国際会議録
国際会議録
5. Total Near Interface Trap Density Calculation of 4H-SiC/SiO2 Structures before and after Nitrogen Passivation
S. Salemi ; A. Akturk ; S. Potbhare ; A.J. Lelis ; N. Goldsman
出版情報: Silicon carbide and related materials 2011 : selected, peer reviewed papers from the 14th International Conference on Silicon Carbide and Related Materials 2011 (ICSCRM 2011), September 11-16, 2011, Cleveland, Ohio, USA.  pp.457-460,  2012.  Aedermannsdorf, Switzerland.  Trans Tech Publications
シリーズ名: Materials science forum
シリーズ巻号: 717-720
6.

国際会議録
国際会議録
6. Temperature-Dependence of SiC MOSFET Threshold-Voltage Instability
A.J. Lelis ; D.B. Habersat ; R. Green ; N. Goldsman
出版情報: Silicon carbide and related materials 2007 : selected peer reviewed papers from the International Conference on Silicon Carbide and Related Materials 2007, Otsu Prince Hotel Covention Hall, Lake Biwa Resort, Otsu, Japan, October 14-19, 2007.  pp.807-810,  2009.  Aedermannsdorf, Switzerland.  Trans Tech Publications
シリーズ名: Materials science forum
シリーズ巻号: 600-603
7.

国際会議録
国際会議録
7. Large Area Silicon Carbide Photodiode, and Monolithic Readout Design and Fabrication
A. Akturk ; B. Cusack ; N. Goldsman
出版情報: Silicon Carbide and Related Materials 2015 : [ICSCRM 2015] : selected, peer reviewed papers from the 16th International Conference on Silicon Carbide and Related Materials, October 4-9, 2015, Giardini Naxos, Italy.  pp.1023-1027,  2016.  Aedermannsdorf, Switzerland.  Trans Tech Publications
シリーズ名: Materials science forum
シリーズ巻号: 858
8.

国際会議録
国際会議録
8. SPICE Modeling of Advanced Silicon Carbide High Temperature Integrated Circuits
A. Akturk ; N. Goldsman ; A. Ahyi ; S. Dhar ; B. Cusack
出版情報: Silicon Carbide and Related Materials 2015 : [ICSCRM 2015] : selected, peer reviewed papers from the 16th International Conference on Silicon Carbide and Related Materials, October 4-9, 2015, Giardini Naxos, Italy.  pp.1070-1073,  2016.  Aedermannsdorf, Switzerland.  Trans Tech Publications
シリーズ名: Materials science forum
シリーズ巻号: 858
9.

国際会議録
国際会議録
9. Time Dependent Trapping and Generation-Recombination of Interface Charges: Modeling and Characterization for 4H-SiC MOSFETs
S. Potbhare ; N. Goldsman ; G. Pennington ; A. Lelis ; J.M. McGarrity
出版情報: Silicon carbide and related materials 2006 : ECSCRM 2006, Proceedings of the 6th European Conference on Silicon Carbide and Related Materials, Newcastle upon Tyne, UK, September 2006.  pp.847-850,  2007.  Stafa-Zuerich.  Trans Tech Publications
シリーズ名: Materials science forum
シリーズ巻号: 556-557
10.

国際会議録
国際会議録
10. Investigation of Drain Current Saturation in 4H-SiC MOSFETs
G. Pennington ; S. Potbhare ; N. Goldsman ; D. Habersat ; A. Lelis ; J.M. McGarrity ; C. Ashman
出版情報: Silicon carbide and related materials 2006 : ECSCRM 2006, Proceedings of the 6th European Conference on Silicon Carbide and Related Materials, Newcastle upon Tyne, UK, September 2006.  pp.811-814,  2007.  Stafa-Zuerich.  Trans Tech Publications
シリーズ名: Materials science forum
シリーズ巻号: 556-557