1.

国際会議録
国際会議録
1. On the role of foreign atoms in the optimization of 3C-SiC/Si heterointerfaces
Masri, P. ; Moreaud, N. ; Averous, M. ; Stauden, Th. ; Wohner, T. ; Pezoldt, J.
出版情報: Wide-bandgap semiconductors for high-power, high-frequency, and high temperature applications--1999 : symposium held April 5-8, 1999, San Francisco, California, U.S.A..  pp.213-,  1999.  Warrendale, PA.  MRS-Materials Research Society
シリーズ名: Materials Research Society symposium proceedings
シリーズ巻号: 572
2.

国際会議録
国際会議録
2. Growth of 3C-SiC on Si by Low Temperature CVD
Cloitre, T. ; Moreaud, N. ; Vicente, P. ; Sadowski, M.L. ; Aulombard, R.L.
出版情報: Silicon carbide and related materials : ECSCRM2000, proceedings of the 3rd European Conference on Silicon Carbide and Related Materials, Kloster Banz, Germany, September 2000.  pp.159-162,  2001.  Uetikon-Zuerich, Switzerland.  Trans Tech Publications
シリーズ名: Materials science forum
シリーズ巻号: 353-356
3.

国際会議録
国際会議録
3. Optimization of the Carbonized Buffer Layer for the Growth of High Quality Single Crystal SiC on Si
Cloitre, T. ; Moreaud, N. ; Vicente, P. ; Sadowski, M. ; Moret, M. ; Aulombard, R.L.
出版情報: Silicon carbide--materials, processing and devices : symposium held November 27-29, 2000, Boston, Massachusetts, U.S.A..  2001.  Warrendale, Pa..  Materials Research Society
シリーズ名: Materials Research Society symposium proceedings
シリーズ巻号: 640