1.

国際会議録
国際会議録
1. Dynamic Characteristics of 4H-SiC pin Dlode on (000-1)C-Face with Small Forward Degradation
Nakayama, K. ; Sugawara, Y. ; Ishii, R. ; Tsuchida, H. ; Miyanagi, T. ; Kamata, I. ; Nakamura, T.
出版情報: Silicon carbide and related materials - 2005 : proceedings of the International Conference on Silicon Carbide and Related Materials - 2005 : Pittsburgh, Pennsylvania, USA : September 18-23 2005.  pp.1359-1362,  2006.  Stafa-Zuerich.  Trans Tech Publications
シリーズ名: Materials science forum
シリーズ巻号: 527-529
2.

国際会議録
国際会議録
2. Comparison of Propagation and Nucleation of Basal Plane Dislocations in 4H-SiC(000-1) and (0001) Epitaxy
Tsuchida, H. ; Kamata, I. ; Miyanagi, T. ; Nakamura, T. ; Nakayama, K. ; Ishii, R. ; Sugawara, Y.
出版情報: Silicon carbide and related materials - 2005 : proceedings of the International Conference on Silicon Carbide and Related Materials - 2005 : Pittsburgh, Pennsylvania, USA : September 18-23 2005.  pp.231-234,  2006.  Stafa-Zuerich.  Trans Tech Publications
シリーズ名: Materials science forum
シリーズ巻号: 527-529
3.

国際会議録
国際会議録
3. Development of Non-Destructive In-House Observation Techniques for Dislocations and Stacking Faults in SiC Epilayers
Kamata, I. ; Tsuchida, H. ; Miyanagi, T. ; Nakamura, T.
出版情報: Silicon carbide and related materials - 2005 : proceedings of the International Conference on Silicon Carbide and Related Materials - 2005 : Pittsburgh, Pennsylvania, USA : September 18-23 2005.  pp.415-418,  2006.  Stafa-Zuerich.  Trans Tech Publications
シリーズ名: Materials science forum
シリーズ巻号: 527-529
4.

国際会議録
国際会議録
4. Observation of Shrinking and Reformation of Shockley Stacking Faults by PL Mapping
Miyanagi, T. ; Tsuchida, H. ; Kamata, I. ; Nakamura, T. ; Ishii, R. ; Nakayama, K. ; Sugawara, Y.
出版情報: Silicon carbide and related materials - 2005 : proceedings of the International Conference on Silicon Carbide and Related Materials - 2005 : Pittsburgh, Pennsylvania, USA : September 18-23 2005.  pp.375-378,  2006.  Stafa-Zuerich.  Trans Tech Publications
シリーズ名: Materials science forum
シリーズ巻号: 527-529
5.

国際会議録
国際会議録
5. Investigation of Basal Plane Dislocations in the 4H-SiC Epilayers Grown on {0001} Substrates
Tsuehida, H. ; Miyanagi, T. ; Kamata, I. ; Nakamura, T. ; Izumi, K. ; Nakayama, K. ; Ishii, R. ; Asano, K. ; Sugawara, Y.
出版情報: Silicon carbide and related materials 2004 : ECSCRM 2004 : proceedings of the 5th European Conference on Silicon Carbide and Related Materials, August 31 - September 4 2004, Bologna, Italy.  pp.97-100,  2005.  Uetikon-Zuerich.  Trans Tech Publications
シリーズ名: Materials science forum
シリーズ巻号: 483-485
6.

国際会議録
国際会議録
6. Comparison of Electrical Characteristics of 4H-SiC(0001) and (000-1) Schottky Barrier Diodes
Nakamura, T. ; Miyanagi, T. ; Kamata, I. ; Tsuchida, H.
出版情報: Silicon carbide and related materials - 2005 : proceedings of the International Conference on Silicon Carbide and Related Materials - 2005 : Pittsburgh, Pennsylvania, USA : September 18-23 2005.  pp.927-930,  2006.  Stafa-Zuerich.  Trans Tech Publications
シリーズ名: Materials science forum
シリーズ巻号: 527-529
7.

国際会議録
国際会議録
7. Characterization of 2in SiC As-Grown Bulk by SWBXT at SPring-8
Sasaki, M. ; Hirai, A. ; Miyanagi, T. ; Furusho, T. ; Nishiguchi, T. ; Shiomi, H. ; Nishino, S.
出版情報: Silicon carbide and related materials 2001 : ICSCRM2001, proceedings of the International Conference on Silicon Carbide and Related Materials 2001, Tsukuba, Japan, October 28-November 2, 2001.  pp.407-410,  2002.  Zuerich, Switzerland.  Trans Tech Publications
シリーズ名: Materials science forum
シリーズ巻号: 389-393
8.

国際会議録
国際会議録
8. Observation of 2in SiC Wafer by SWBXT at SPring-8
Sasaki, M. ; Hirai, A. ; Miyanagi, T. ; Furusho, T. ; Nishiguchi, T. ; Shiomi, H. ; Nishino, S.
出版情報: Silicon carbide and related materials 2001 : ICSCRM2001, proceedings of the International Conference on Silicon Carbide and Related Materials 2001, Tsukuba, Japan, October 28-November 2, 2001.  pp.411-414,  2002.  Zuerich, Switzerland.  Trans Tech Publications
シリーズ名: Materials science forum
シリーズ巻号: 389-393
9.

国際会議録
国際会議録
9. Homoepitaxial Growth and Characterization of Thick SiC Layers With a Reduced Micropipe Density
Tsuchida, H. ; Kamata, I. ; Izumi, S. ; Tawara, T. ; Jikimoto, T. ; Miyanagi, T. ; Nakamura, T. ; Izumi, K.
出版情報: Silicon carbide 2004--materials, processing and devices : symposium held April 14-15, 2004, San Francisco, California, U.S.A..  pp.35-46,  2004.  Warrendale, Pa..  Materials Research Society
シリーズ名: Materials Research Society symposium proceedings
シリーズ巻号: 815
10.

国際会議録
国際会議録
10. Improvement in Electrical Performance of Schottky Contacts for High-Voltage Diode
Nakamura, T. ; Miyanagi, T. ; Tsuchida, H. ; Kamata, I. ; Jikimoto, T. ; Izumi, K.
出版情報: Silicon carbide and related materials 2004 : ECSCRM 2004 : proceedings of the 5th European Conference on Silicon Carbide and Related Materials, August 31 - September 4 2004, Bologna, Italy.  pp.721-724,  2005.  Uetikon-Zuerich.  Trans Tech Publications
シリーズ名: Materials science forum
シリーズ巻号: 483-485