1.

国際会議録
国際会議録
1. RELATION BETWEEN LEAKAGE CURRENT IN PIN PHOTODIODES AND DEFECTS IN InGaAs(P)/InP HETEROSTRUCTURES GROWN BY LOW PRESSURE MOCVD
Knight, D. G. ; Miner, C. J. ; Springthope, A. J.
出版情報: Degradation mechanisms in III-V compound semiconductor devices and structures : symposium held April 17-18, 1990, San Francisco, California, U.S.A..  pp.157-164,  1990.  Pittsburgh, Pa..  Materials Research Society
シリーズ名: Materials Research Society symposium proceedings
シリーズ巻号: 184
2.

国際会議録
国際会議録
2. GROWTH AND CHARACTERIZATION OF HETEROEPITAXIAL GaAs ON SEMICONDUCTOR-ON-INSULATOR AND INSULATING SUBSTRATES
Humphreys, T. P. ; Das. K. ; Parikh, N.R. ; Posthill, J. B. ; Nemanich, R. J. ; Miner, C. J. ; Sukow, C. A. ; Summerville, M. K ; Ross., P. L. ; Markunas, R. J.
出版情報: III-V heterostructures for electronic/photonic devices : symposium held April 24-27, 1989, San Diego, California, U.S.A..  pp.297-304,  1989.  Pittsburgh, Pa..  Materials Research Society
シリーズ名: Materials Research Society symposium proceedings
シリーズ巻号: 145
3.

国際会議録
国際会議録
3. DCD AND LOW T PL DETERMINATION OF BANDGAP DEPENDENCE ON COMPOSITION FOR MOCVD InGaAs/InP
Bassignana, I. C. ; Miner, C. J. ; Puetz, N.
出版情報: Epitaxy of semiconductor layered structures : symposium held November 30-December 4, 1987, Boston, Massachusetts, U.S.A..  pp.197-200,  1988.  Pittsburgh, Pa..  Materials Research Society
シリーズ名: Materials Research Society symposium proceedings
シリーズ巻号: 102