1.

国際会議録
国際会議録
1. Ion implanted MOS transistors
Merckel G.
出版情報: Process and device modeling for integrated circuit design : [proceedings of the NATO Advanced Study Institute on Process and device modeling for integrated circuit design, Louvain-la-Neuve, Belgium, July 19-29, 1977].  pp.677-688,  1977.  Leyden.  Noordhoff International Publishing
シリーズ名: NATO ASI series. Series E, Applied sciences
シリーズ巻号: 21
2.

国際会議録
国際会議録
2. SOS MOSFET's
Merckel G.
出版情報: Process and device modeling for integrated circuit design : [proceedings of the NATO Advanced Study Institute on Process and device modeling for integrated circuit design, Louvain-la-Neuve, Belgium, July 19-29, 1977].  pp.725-738,  1977.  Leyden.  Noordhoff International Publishing
シリーズ名: NATO ASI series. Series E, Applied sciences
シリーズ巻号: 21
3.

国際会議録
国際会議録
3. Short channels. Scaled down MOSFET's
Merckel G.
出版情報: Process and device modeling for integrated circuit design : [proceedings of the NATO Advanced Study Institute on Process and device modeling for integrated circuit design, Louvain-la-Neuve, Belgium, July 19-29, 1977].  pp.705-724,  1977.  Leyden.  Noordhoff International Publishing
シリーズ名: NATO ASI series. Series E, Applied sciences
シリーズ巻号: 21
4.

国際会議録
国際会議録
4. CAD models of MOSFET's
Merckel G.
出版情報: Process and device modeling for integrated circuit design : [proceedings of the NATO Advanced Study Institute on Process and device modeling for integrated circuit design, Louvain-la-Neuve, Belgium, July 19-29, 1977].  pp.751-764,  1977.  Leyden.  Noordhoff International Publishing
シリーズ名: NATO ASI series. Series E, Applied sciences
シリーズ巻号: 21
5.

国際会議録
国際会議録
5. Surface characterization. Weak inversion
Merckel G.
出版情報: Process and device modeling for integrated circuit design : [proceedings of the NATO Advanced Study Institute on Process and device modeling for integrated circuit design, Louvain-la-Neuve, Belgium, July 19-29, 1977].  pp.609-615,  1977.  Leyden.  Noordhoff International Publishing
シリーズ名: NATO ASI series. Series E, Applied sciences
シリーズ巻号: 21
6.

国際会議録
国際会議録
6. Surface characterization. C-V technique
Merckel G. ; de Pontcharra J.
出版情報: Process and device modeling for integrated circuit design : [proceedings of the NATO Advanced Study Institute on Process and device modeling for integrated circuit design, Louvain-la-Neuve, Belgium, July 19-29, 1977].  pp.589-608,  1977.  Leyden.  Noordhoff International Publishing
シリーズ名: NATO ASI series. Series E, Applied sciences
シリーズ巻号: 21