1.

国際会議録
国際会議録
1. CoSi2 Formation Using a Ti Capping Layer - The Influence of Processing Conditions on CoSi2 Nucleation
Detavernier, C. ; Meirhaeghe, R.L. Van ; Maex, K.
出版情報: Gate stack and silicide issues in silicon processing II : symposium held April 17-19, 2001, San Francisco, California, U.S.A..  2002.  Warrendale, PA.  Materials Research Society
シリーズ名: Materials Research Society symposium proceedings
シリーズ巻号: 670
2.

国際会議録
国際会議録
2. Silicide Formation for Ni and Pd Bilayers on Si(100) Substrates
Qu, Xin-Ping ; Detavernier, C. ; Meirhaeghe, R.L. Van ; Cardon, F.
出版情報: Gate stack and silicide issues in silicon processing II : symposium held April 17-19, 2001, San Francisco, California, U.S.A..  2002.  Warrendale, PA.  Materials Research Society
シリーズ名: Materials Research Society symposium proceedings
シリーズ巻号: 670
3.

国際会議録
国際会議録
3. The Influence of Ti and TiN on the Thermal Stability of CoSi2
Detavernier, C. ; Ru, Guo-Ping ; Meirhaeghe, R.L. Van ; Maex, K.
出版情報: Gate stack and silicide issues in silicon processing II : symposium held April 17-19, 2001, San Francisco, California, U.S.A..  2002.  Warrendale, PA.  Materials Research Society
シリーズ名: Materials Research Society symposium proceedings
シリーズ巻号: 670