1.

国際会議録
国際会議録
1. Homoepitaxial Growth of 4H-SiC by Hot-Wall CVD Using BTMSM
H.S. Seo ; H.G. Song ; J.H. Moon ; J.H. Yim ; M.S. Oh
出版情報: Silicon carbide and related materials 2007 : selected peer reviewed papers from the International Conference on Silicon Carbide and Related Materials 2007, Otsu Prince Hotel Covention Hall, Lake Biwa Resort, Otsu, Japan, October 14-19, 2007.  pp.151-154,  2009.  Aedermannsdorf, Switzerland.  Trans Tech Publications
シリーズ名: Materials science forum
シリーズ巻号: 600-603
2.

国際会議録
国際会議録
2. Effect of Post-Oxidation Annealing on High-Temperature Grown SiO2/4H-SiC Interface
J.H. Moon ; K.Y. Cheong ; H.K. Song ; J.H. Yim ; M.S. Oh
出版情報: Silicon carbide and related materials 2007 : selected peer reviewed papers from the International Conference on Silicon Carbide and Related Materials 2007, Otsu Prince Hotel Covention Hall, Lake Biwa Resort, Otsu, Japan, October 14-19, 2007.  pp.731-734,  2009.  Aedermannsdorf, Switzerland.  Trans Tech Publications
シリーズ名: Materials science forum
シリーズ巻号: 600-603
3.

国際会議録
国際会議録
3. Schottky Barrier Diode Fabricated by MOCVD-Grown Epilayer Using Bis- Trimethylsilylmethane Precursor
H.K. Song ; J.H. Lee ; M.S. Oh ; J.H. Moon ; H.S. Seo
出版情報: Silicon carbide and related materials 2007 : selected peer reviewed papers from the International Conference on Silicon Carbide and Related Materials 2007, Otsu Prince Hotel Covention Hall, Lake Biwa Resort, Otsu, Japan, October 14-19, 2007.  pp.971-974,  2009.  Aedermannsdorf, Switzerland.  Trans Tech Publications
シリーズ名: Materials science forum
シリーズ巻号: 600-603