1.

国際会議録
国際会議録
1. Room Temperature Annealing Effects on Leakage Current of Ion Implanted p+n 4H-SiC Diodes
F. Moscatelli ; F. Bergamini ; A. Poggi ; M. Passini ; F. Tamarri
出版情報: Silicon carbide and related materials 2007 : selected peer reviewed papers from the International Conference on Silicon Carbide and Related Materials 2007, Otsu Prince Hotel Covention Hall, Lake Biwa Resort, Otsu, Japan, October 14-19, 2007.  pp.1027-1030,  2009.  Aedermannsdorf, Switzerland.  Trans Tech Publications
シリーズ名: Materials science forum
シリーズ巻号: 600-603
2.

国際会議録
国際会議録
2. Effects of Very High Neutron Fluence Irradiation on p+n Junction 4H-SiC Diodes
F. Moscatelli ; A. Scorzoni ; A. Poggi ; M. Passini ; G. Pizzocchero ; R. Nipoti
出版情報: Silicon carbide and related materials 2006 : ECSCRM 2006, Proceedings of the 6th European Conference on Silicon Carbide and Related Materials, Newcastle upon Tyne, UK, September 2006.  pp.917-920,  2007.  Stafa-Zuerich.  Trans Tech Publications
シリーズ名: Materials science forum
シリーズ巻号: 556-557