1.

国際会議録
国際会議録
1. Critical Reliability Issues for SiC Power MOSFETs Operated at High Temperature
S. Tanimoto ; T. Suzuki ; A. Hanamura ; M. Hoshi ; T. Shinohara ; K. Arai
出版情報: Silicon carbide and related materials 2006 : ECSCRM 2006, Proceedings of the 6th European Conference on Silicon Carbide and Related Materials, Newcastle upon Tyne, UK, September 2006.  pp.779-782,  2007.  Stafa-Zuerich.  Trans Tech Publications
シリーズ名: Materials science forum
シリーズ巻号: 556-557
2.

国際会議録
国際会議録
2. Novel Low VON Poly-Si/4H-SiC Heterojunction Diode Using Energy Barrier Height Control
S. Yamagami ; T. Hayashi ; M. Hoshi
出版情報: Silicon carbide and related materials 2011 : selected, peer reviewed papers from the 14th International Conference on Silicon Carbide and Related Materials 2011 (ICSCRM 2011), September 11-16, 2011, Cleveland, Ohio, USA.  pp.1005-1008,  2012.  Aedermannsdorf, Switzerland.  Trans Tech Publications
シリーズ名: Materials science forum
シリーズ巻号: 717-720