1.

国際会議録
国際会議録
1. A novel high performance planar InGaAs/InAIAs avalanche photodiode [6352-52]
Levine, B. F. ; Sacks, R. N. ; Ko, J. ; Jazwiecki, M. ; Valdmanis, J. A. ; Gunther, D. ; Meier, J. H.
出版情報: Optoelectronic materials and devices : 5-7 September, 2006, Gwangju, South Korea.  pp.63521D-,  2006.  Bellingham, Wash..  SPIE - The International Society of Optical Engineering
シリーズ名: Proceedings of SPIE - the International Society for Optical Engineering
シリーズ巻号: 6352
2.

国際会議録
国際会議録
2. P-TYPE QUANTUM WELL INFRARED PHOTODETECTORS GROWN BY OMVPE
Hobson, W. S. ; Zussman, A. ; De Jong, J. ; Levine, B. F.
出版情報: Advanced III-V compound semiconductor growth, processing and devices : symposium held Decmber[i.e. December] 2-5, 1991, Boston, Massachusetts, U.S.A..  pp.569-574,  1992.  Pittsburgh, Pa..  Materials Research Society
シリーズ名: Materials Research Society symposium proceedings
シリーズ巻号: 240
3.

国際会議録
国際会議録
3. ELECTRON BEAM SOURCE MOLECULAR BEAM EPITAXY OF AlXGa1-XAs GRADED BAND GAP OEVICE STRUCTURES
Malik, R. J. ; Levi, A. F. J. ; Levine, B. F. ; Miller, R. C. ; Lang, D. V. ; Hopkins, L. C. ; Ryan, R. W.
出版情報: Epitaxy of semiconductor layered structures : symposium held November 30-December 4, 1987, Boston, Massachusetts, U.S.A..  pp.491-496,  1988.  Pittsburgh, Pa..  Materials Research Society
シリーズ名: Materials Research Society symposium proceedings
シリーズ巻号: 102