1.

国際会議録
国際会議録
1. Relationship Between Interfacial Roughness and Dielectric Reliability for Silicon Oxynitride Gate Dielectrics Processed With Nitric Oxide
Sapjeta, J. ; Green, M. L. ; Chang, J. P. ; Silverman, P. J. ; Sorsch, T. W. ; Weir, B. E. ; Gladden, W. ; Ma, Y. ; Sung, C. Y. ; Lennard, W. N.
出版情報: Ultrathin SiO[2] and high-K materials for USLI gate dielectrics : symposium held April 5-8, 1999, in San Francisco, California, U.S.A..  pp.289-,  1999.  Warrendale, PA.  MRS - Materials Research Society
シリーズ名: Materials Research Society symposium proceedings
シリーズ巻号: 567
2.

国際会議録
国際会議録
2. Orientation Dependence of Surface Passivation for Semi-Insulating GaAs
Koutzarov, I. P. ; Edirisinghe, C. H. ; Ruda, H. E. ; Jedral, L. Z. ; Liu, Q. ; Guo-Ping, J. ; Xia, H. ; Lennard, W. N. ; Rodrigues-Fernandez, L.
出版情報: Compound semiconductor electronics and photonics : symposium held April 8-10, 1996, San Francisco, California, U.S.A..  pp.93-,  1996.  Pittsburgh, Penn.  MRS - Materials Research Society
シリーズ名: Materials Research Society symposium proceedings
シリーズ巻号: 421