1.

国際会議録
国際会議録
1. Epitaxial Growth of GaN on Silicon Substrates by Low-Pressure MOCVD using AlAs,AlAs/GaAs,and AIN Buffer Layers
Strittmatter,A. ; Krost,A. ; Schatke,K. ; Bimberg,D. ; Blasing,J. ; Christen,J.
出版情報: Silicon carbide, III-nitrides and related materials, ICSCIII-N'97 : proceedings of the International Conference on Silicon Carbide, III-Nitrides and Related Materials, Stockholm, Sweden, September 1997.  Part2  pp.1145-1148,  1998.  Zuerich, Switzerland.  Trans Tech Publications
シリーズ名: Materials science forum
シリーズ巻号: 264-268
2.

国際会議録
国際会議録
2. Silicon as a substrate in multiwafer MOVPE GaN technology
Alam,A. ; Schineller,B. ; Protzmann,H. ; Lunenburger,M. ; Heuken,M. ; Bremser,M.D. ; Woelk,E. ; Dadgar,A. ; Krost,A.
出版情報: Light-Emitting Diodes: Research, Manufacturing, and Applications V.  pp.158-164,  2001.  Bellingham, Wash..  SPIE-The International Society for Optical Engineering
シリーズ名: Proceedings of SPIE - the International Society for Optical Engineering
シリーズ巻号: 4278