1.

国際会議録
国際会議録
1. EFFECT OF Si ADDITION ON THE REACTION GROWTH AND MORPHOLOGY OF AN ALUMINIDE COMPOUND IN Al-Cu-Si/Ti-W BILAYERS
Park, M. ; Krause, S.J. ; Wilson, S.R.
出版情報: Evolution of surface and thin film microstructure : symposium held November 30-December 4, 1992, Boston, Massachusetts, U.S.A..  pp.645-648,  1993.  Pittsburgh, Pa..  Materials Research Society
シリーズ名: Materials Research Society symposium proceedings
シリーズ巻号: 280
2.

国際会議録
国際会議録
2. STRUCTURAL CHANGES DURING TRANSIENT POST-ANNEALING OF PREANNEALED AND ARSENIC IMPLANTED POLYCRYSTALLINE SILICON FILMS
Krause, S.J. ; Wilson, S.R. ; Gregory, R.B. ; Paulson, W.M. ; Leavitt, J.A. ; McIntyre Jr., L.C. ; Seerveld, J.L. ; Stoss, P.
出版情報: Rapid thermal processing : symposium held December 2-4, 1985, Boston, Massachusetts, U.S.A..  pp.145-152,  1985.  Pittsburgh, Pa..  Materials Research Society
シリーズ名: Materials Research Society symposium proceedings
シリーズ巻号: 52
3.

国際会議録
国際会議録
3. OXYGEN BUBBLE FORMATION AND TRANSFORMATION DURING HIGH-DOSE OXYGEN IMPLANTATION AND ANNEALING OF SILICON
Krause, S.J. ; Seraphin, S. ; Chen, B.L. ; Cordts, B. ; Roitman, P.
出版情報: Surface chemistry and beam-solid interactions : symposium held November 26-29, 1990, Boston, Massachusetts, U.S.A..  pp.229-234,  1991.  Pittsburgh, Pa..  Materials Research Society
シリーズ名: Materials Research Society symposium proceedings
シリーズ巻号: 201
4.

国際会議録
国際会議録
4. EFFECT OF ANNEALING ON THE STRUCTURE OF BURIED SiO2 LAYERS FORMED BY ELEVATED TEMPERATURE HIGH DOSE OXYGEN IMPLANTATION
Krause, S.J. ; Jung, C.O. ; Wilson, S.R. ; Lorigan, R.P. ; Burnham, M.E.
出版情報: Semiconductor-on-insulator and thin film transistor technology : symposium held December 3-6, 1985, Boston, Massachusetts, U.S.A..  pp.257-262,  1985.  Pittsburgh, Pa..  Materials Research Society
シリーズ名: Materials Research Society symposium proceedings
シリーズ巻号: 53
5.

国際会議録
国際会議録
5. Effect of implantation conditions on defect microstructure in annealed SIMOX
Lee, J.D. ; Park, J.C. ; Krause, S.J. ; Venables, D. ; Roitman, P.
出版情報: Proceedings of the Sixth International Symposium on Silicon-on-Insulator Technology and Devices.  pp.82-91,  1994.  Pennington, NJ.  Electrochemical Society
シリーズ名: Electrochemical Society Proceedings Series
シリーズ巻号: 1994-11
6.

国際会議録
国際会議録
6. Effect of nitrogen ambients during high temperature SIMOX annealing
Roitman, P. ; Mayo, S. ; Simons, D. ; Krause, S.J. ; Venables, D. ; Park, J.C. ; Lee, J.D. ; Lenahan, P. ; Conley, J.
出版情報: Proceedings of the Sixth International Symposium on Silicon-on-Insulator Technology and Devices.  pp.92-97,  1994.  Pennington, NJ.  Electrochemical Society
シリーズ名: Electrochemical Society Proceedings Series
シリーズ巻号: 1994-11