1.

国際会議録
国際会議録
1. Effect of Additional Silane on In Situ H2 Etching prior to 4H-SiC Homoepitaxial Growth
K. Kojima ; S. Kuroda ; H. Okumura ; K. Arai
出版情報: Silicon carbide and related materials 2006 : ECSCRM 2006, Proceedings of the 6th European Conference on Silicon Carbide and Related Materials, Newcastle upon Tyne, UK, September 2006.  pp.85-88,  2007.  Stafa-Zuerich.  Trans Tech Publications
シリーズ名: Materials science forum
シリーズ巻号: 556-557
2.

国際会議録
国際会議録
2. Development of Fuel Cell Hybrid Vehicle in Toyota
K. Kojima ; T. Morita
出版情報: Proton exchange membrane fuel cells 8.  pp.185-198,  2008.  Pennington, NJ.  Electrochemical Society
シリーズ名: ECS transactions
シリーズ巻号: 16(2)
3.

国際会議録
国際会議録
3. Development of SiC Super-Junction (SJ) Device by Deep Trench-Filling Epitaxial Growth
R. Kosugi ; Y. Sakuma ; K. Kojima ; S. Itoh ; A. Nagata
出版情報: Silicon carbide and related materials 2012 : selected, peer reviewed papers from the 9th European Conference on Silicon Carbide and Related Materials (ECSCRM 2012), September 2-6,2012, St. Petersburg, Russian Federation.  pp.785-788,  2013.  Aedermannsdorf, Switzerland.  Trans Tech Publications
シリーズ名: Materials science forum
シリーズ巻号: 740-742
4.

国際会議録
国際会議録
4. Filling of Deep Trench by Epitaxial SiC Growth
K. Kojima ; A. Nagata ; S. Ito ; Y. Sakuma ; R. Kosugi
出版情報: Silicon carbide and related materials 2012 : selected, peer reviewed papers from the 9th European Conference on Silicon Carbide and Related Materials (ECSCRM 2012), September 2-6,2012, St. Petersburg, Russian Federation.  pp.793-796,  2013.  Aedermannsdorf, Switzerland.  Trans Tech Publications
シリーズ名: Materials science forum
シリーズ巻号: 740-742
5.

国際会議録
国際会議録
5. The Growth of 3-Inch 4H-SiC Si-Face Epitaxial Wafer with Vicinal Off-Angle
K. Masumoto ; K. Kojima ; H. Okumura
出版情報: Silicon carbide and related materials 2012 : selected, peer reviewed papers from the 9th European Conference on Silicon Carbide and Related Materials (ECSCRM 2012), September 2-6,2012, St. Petersburg, Russian Federation.  pp.193-196,  2013.  Aedermannsdorf, Switzerland.  Trans Tech Publications
シリーズ名: Materials science forum
シリーズ巻号: 740-742
6.

国際会議録
国際会議録
6. Low Resistivity, Thick Heavily Al-Doped 4H-SiC Epilayers Grown by Hot-Wall Chemical Vapor Deposition
S.Y. Ji ; K. Kojima ; Y. Ishida ; H. Tsuchida ; S. Yoshida
出版情報: Silicon carbide and related materials 2012 : selected, peer reviewed papers from the 9th European Conference on Silicon Carbide and Related Materials (ECSCRM 2012), September 2-6,2012, St. Petersburg, Russian Federation.  pp.181-184,  2013.  Aedermannsdorf, Switzerland.  Trans Tech Publications
シリーズ名: Materials science forum
シリーズ巻号: 740-742
7.

国際会議録
国際会議録
7. Effect of H2 Carrier Gas on CVD Growth Rate for 4H-SiC Trench Filling
S.Y. Ji ; K. Kojima ; R. Kosugi ; S. Saito ; Y. Sakuma
出版情報: Silicon Carbide and Related Materials 2015 : [ICSCRM 2015] : selected, peer reviewed papers from the 16th International Conference on Silicon Carbide and Related Materials, October 4-9, 2015, Giardini Naxos, Italy.  pp.181-184,  2016.  Aedermannsdorf, Switzerland.  Trans Tech Publications
シリーズ名: Materials science forum
シリーズ巻号: 858
8.

国際会議録
国際会議録
8. A Novel Approach to Analysis of F-N Tunneling Characteristics in MOS Capacitor Having Oxide Thickness Fluctuation
K. Yamada ; J. Senzaki ; K. Kojima ; H. Okumura
出版情報: Silicon Carbide and Related Materials 2015 : [ICSCRM 2015] : selected, peer reviewed papers from the 16th International Conference on Silicon Carbide and Related Materials, October 4-9, 2015, Giardini Naxos, Italy.  pp.433-436,  2016.  Aedermannsdorf, Switzerland.  Trans Tech Publications
シリーズ名: Materials science forum
シリーズ巻号: 858
9.

国際会議録
国際会議録
9. Analysis of Gate Oxide Nitridation Effect on SiC MOSFETs by Using Hall Measurement and Split C-V Measurement
M. Tsujimura ; H. Kitai ; H. Shiomi ; K. Kojima ; K. Fukuda
出版情報: Silicon Carbide and Related Materials 2015 : [ICSCRM 2015] : selected, peer reviewed papers from the 16th International Conference on Silicon Carbide and Related Materials, October 4-9, 2015, Giardini Naxos, Italy.  pp.441-444,  2016.  Aedermannsdorf, Switzerland.  Trans Tech Publications
シリーズ名: Materials science forum
シリーズ巻号: 858
10.

国際会議録
国際会議録
10. Instability of Critical Electric Field in Gate Oxide Film of Heavy Ion Irradiated SiC MOSFETs
M. Deki ; T. Makino ; K. Kojima ; T. Tomita ; T. Ohshima
出版情報: Silicon Carbide and Related Materials 2014 : Selected peer reviewed papers from the European Conference on Silicon Carbide & Related Materials (ECSCRM 2014), September 21-25, 2014, Grenoble, France.  pp.673-676,  2015.  Aedermannsdorf, Switzerland.  Trans Tech Publications
シリーズ名: Materials science forum
シリーズ巻号: 821-823