1.

国際会議録
国際会議録
1. 4H-SiC Digital Logic Circuitry Based on P+ Implanted Isolation Walls MESFET Technology
M. Alexandru ; V. Banu ; P. Godignon ; M. Vellvehi ; J. Millán
出版情報: Silicon carbide and related materials 2012 : selected, peer reviewed papers from the 9th European Conference on Silicon Carbide and Related Materials (ECSCRM 2012), September 2-6,2012, St. Petersburg, Russian Federation.  pp.1048-1051,  2013.  Aedermannsdorf, Switzerland.  Trans Tech Publications
シリーズ名: Materials science forum
シリーズ巻号: 740-742
2.

国際会議録
国際会議録
2. Study on the Feasibility of SiC Bandgap Voltage Reference for High Temperature Applications
V. Banu ; P. Godignon ; X. Jordá ; M. Alexandru ; J. Millán
出版情報: Silicon Carbide and Related Materials 2010 : Selected, peer reviewed papers from the 8th European Conference on Silicon Carbide and Related Materials (ECSCRM 2010), held in Oslo (Sundvolden Conference Centre), Norway, August 29th - September 2nd.  pp.754-757,  2011.  Aedermannsdorf, Switzerland.  Trans Tech Publications
シリーズ名: Materials science forum
シリーズ巻号: 679-680
3.

国際会議録
国際会議録
3. Integration of Temperature and Current Sensors in 4H-SiC VDMOS
M. Berthou ; P. Godignon ; P. Brosselard ; D. Tournier ; J. Millán
出版情報: Silicon carbide and related materials 2011 : selected, peer reviewed papers from the 14th International Conference on Silicon Carbide and Related Materials 2011 (ICSCRM 2011), September 11-16, 2011, Cleveland, Ohio, USA.  pp.1093-1096,  2012.  Aedermannsdorf, Switzerland.  Trans Tech Publications
シリーズ名: Materials science forum
シリーズ巻号: 717-720
4.

国際会議録
国際会議録
4. High Voltage SiC Schottky Diodes in Rectifiers for X-Ray Generators
P. Lürkens ; P. Guimaraes ; P. Godignon ; J. Millán
出版情報: Silicon carbide and related materials 2011 : selected, peer reviewed papers from the 14th International Conference on Silicon Carbide and Related Materials 2011 (ICSCRM 2011), September 11-16, 2011, Cleveland, Ohio, USA.  pp.1245-1248,  2012.  Aedermannsdorf, Switzerland.  Trans Tech Publications
シリーズ名: Materials science forum
シリーズ巻号: 717-720
5.

国際会議録
国際会議録
5. Low Energy Proton Radiation Impact on 4H-SiC nMOSFET Gate Oxide Stability
M. Florentin ; M. Alexandru ; A. Constant ; B. Schmidt ; J. Millán
出版情報: Silicon carbide and related materials 2013 : selected, peer reviewed papers from the 15th International Conference on Silicon Carbide and Related Materials (ICSCRM 2013), September 29 - October 4, 2013, Miyazaki, Japan.  pp.525-528,  2014.  Aedermannsdorf, Switzerland.  Trans Tech Publications
シリーズ名: Materials science forum
シリーズ巻号: 778-780
6.

国際会議録
国際会議録
6. Remarkable Increase in Surge Current Capability of SiC Schottky Diodes Using Press Pack Contacts
V. Banu ; P. Godignon ; X. Jordá ; X. Perpinya ; J. Millán
出版情報: Silicon carbide and related materials 2012 : selected, peer reviewed papers from the 9th European Conference on Silicon Carbide and Related Materials (ECSCRM 2012), September 2-6,2012, St. Petersburg, Russian Federation.  pp.873-876,  2013.  Aedermannsdorf, Switzerland.  Trans Tech Publications
シリーズ名: Materials science forum
シリーズ巻号: 740-742
7.

国際会議録
国際会議録
7. Demonstration of High Temperature Bandgap Voltage Reference Feasibility on SiC Material
V. Banu ; P. Brosselard ; X. Jordá ; P. Godignon ; J. Millán
出版情報: Silicon carbide and related materials 2009 : selected peer reviewed papers from the International Conference on Silicon Carbide and Related Materials 2009, Nurnberg, Germany, October 11-16, 2009.  pp.1131-1134,  2010.  Aedermannsdorf, Switzerland.  Trans Tech Publications
シリーズ名: Materials science forum
シリーズ巻号: 645-648
8.

国際会議録
国際会議録
8. Monolithic Integration of Power MESFET for High Temperature SiC Integrated Circuits
V. Banu ; J. Montserrat ; M. Alexandru ; X. Jordá ; J. Millán
出版情報: Silicon carbide and related materials 2013 : selected, peer reviewed papers from the 15th International Conference on Silicon Carbide and Related Materials (ICSCRM 2013), September 29 - October 4, 2013, Miyazaki, Japan.  pp.891-894,  2014.  Aedermannsdorf, Switzerland.  Trans Tech Publications
シリーズ名: Materials science forum
シリーズ巻号: 778-780
9.

国際会議録
国際会議録
9. Point Defects Investigation of High Energy Proton Irradiated SiC p+-i-n Diodes
G. Alfieri ; A. Mihaila ; R. Nipoti ; M. Puzzanghera ; G. Sozzi ; P. Godignon ; J. Millán
出版情報: Silicon Carbide and Related Materials 2016.  pp.246-249,  2017.  Aedermannsdorf, Switzerland.  Trans Tech Publications
シリーズ名: Materials science forum
シリーズ巻号: 897
10.

国際会議録
国際会議録
10. Improved 4H-SiC N-MOSFET Interface Passivation by Combining N2O Oxidation with Boron Diffusion
M. Cabello ; V. Soler ; N. Mestres ; J. Montserrat ; J. Rebollo ; J. Millán ; P. Godignon
出版情報: Silicon Carbide and Related Materials 2016.  pp.352-355,  2017.  Aedermannsdorf, Switzerland.  Trans Tech Publications
シリーズ名: Materials science forum
シリーズ巻号: 897