1.

国際会議録
国際会議録
1. High-Resolution X-ray Topography of Dislocations in 4H-SiC Epilayers
Isaho Kamata ; Hidekazu Tsuchida ; William M. Vetter ; Michael Dudley
出版情報: Silicon carbide 2006--materials, processing and devices : symposium held April 18-20, 2006, San Francisco, California, U.S.A..  pp.175-180,  2006.  Warrendale, Pa..  Materials Research Society
シリーズ名: Materials Research Society symposium proceedings
シリーズ巻号: 911
2.

国際会議録
国際会議録
2. Cause of Forward Voltage Degradation for 4H-SiC PiN Diode with Additional Process
Tetsuro Hemmi ; Koji Nakayama ; Katsunori Asano ; Tetsuya Miyazawa ; Hidekazu Tsuchida
出版情報: Compound semiconductor materials and devices : symposium held December 1-6, 2013, Boston, Massachusetts, U.S.A..  pp.121-126,  2014.  Warrendale, Pa..  Materials Research Society
シリーズ名: Materials Research Society symposium proceedings
シリーズ巻号: 1635
3.

国際会議録
国際会議録
3. Influence of Growth Conditions and Substrate Properties on Formation of Interfacial Dislocations and Dislocation Half-loop Arrays in 4H-SiC(0001) and (000-1) Epitaxy
Hidekazu Tsuchida ; Isaho Kamata ; Kazutoshi Kojima ; Kenji Momose ; Michiya Odawara ; Tetsuo Takahashi ; Yuuki Ishida ; Keiichi Matsuzawa
出版情報: Silicon Carbide 2008--materials, processing and devices : symposium held March 25-27, 2008, San Francisco, California, U.S.A..  pp.123-128,  2008.  Warrendale, Pa..  Materials Research Society
シリーズ名: Materials Research Society symposium proceedings
シリーズ巻号: 1069