1.

国際会議録
国際会議録
1. EL2 RELATED ANOMALOUS SPLITTING IN THE PHOTOREFLECTANCE RESPONSE OF SEMI-INSULATING GaAs
Durbin, C. ; Estreta, J. ; Glosser, R. ; Duncan, W.. ; Henry, R. L. ; Nordquist, P. ; Bottka, N. ; Gaskill, D. K
出版情報: Defect engineering in semiconductor growth, processing and device technology : symposium held April 26-May 1, 1992, San Francisco, California, U.S.A..  pp.289-294,  1992.  Pittsburgh, Pa..  Materials Research Society
シリーズ名: Materials Research Society symposium proceedings
シリーズ巻号: 262
2.

国際会議録
国際会議録
2. High-Resolution X-ray Diffraction and X-ray Topography Study of GaN on Al2O3
Chaudhuri, J. ; Ng, M. Hooe ; Koleske, D. D. ; Wickenden, A. E. ; Henry, R. L.
出版情報: Wide-bandgap semiconductors for high power, high frequency, and high temperature : symposium held April 13-15, 1998, San Francisco, California, U.S.A..  pp.315-,  1998.  Warrendale, Penn..  MRS - Materials Research Society
シリーズ名: Materials Research Society symposium proceedings
シリーズ巻号: 512
3.

国際会議録
国際会議録
3. Current-voltage characteristics of ungated AlGaN/GaN heterostructures
Albrecht, J. D. ; Ruden, P. P. ; Binari, S. C. ; Ikossi-Anastasiou, K. ; Ancona, M. G. ; Henry, R. L. ; Koleske, D. D. ; Wickenden, A. E.
出版情報: Wide-bandgap semiconductors for high-power, high-frequency, and high temperature applications--1999 : symposium held April 5-8, 1999, San Francisco, California, U.S.A..  pp.489-,  1999.  Warrendale, PA.  MRS-Materials Research Society
シリーズ名: Materials Research Society symposium proceedings
シリーズ巻号: 572
4.

国際会議録
国際会議録
4. Correlation of drain current pulsed response with microwave power output in AlGaN/GaN HEMTs
Binari, S. C. ; Ikossi-Anastasiou, K. ; Kruppa, W. ; Dietrich, H. B. ; Kelner, G. ; Henry, R. L. ; Koleske, D. D. ; Wickenden, A. E.
出版情報: Wide-bandgap semiconductors for high-power, high-frequency, and high temperature applications--1999 : symposium held April 5-8, 1999, San Francisco, California, U.S.A..  pp.541-,  1999.  Warrendale, PA.  MRS-Materials Research Society
シリーズ名: Materials Research Society symposium proceedings
シリーズ巻号: 572
5.

国際会議録
国際会議録
5. A Kinetic Model for GaN Growth
Koleske, D. D. ; Wickenden, A. E. ; Henry, R. L. ; DeSisto, W. J. ; Gorman, R. J.
出版情報: Nitride semiconductors : symposium held December 1-5, 1997, Boston, Massachusetts, U.S.A..  pp.167-,  1998.  Warrendale, Pa..  MRS - Materials Research Society
シリーズ名: Materials Research Society symposium proceedings
シリーズ巻号: 482
6.

国際会議録
国際会議録
6. GaN decomposition in ammonia
Koleske, D. D. ; Wickenden, A. E. ; Henry, R. L.
出版情報: GaN and related alloys - 1999 : symposium held November 28-December 3, 1999, Boston, Massachusetts, U.S.A..  pp.W3.64.1-,  2000.  Warrendale, Pa..  MRS-Materials Research Society
シリーズ名: Materials Research Society symposium proceedings
シリーズ巻号: 595
7.

国際会議録
国際会議録
7. Enhanced GaN Decomposition at MOVPE Pressures
Koleske, D. D. ; Wickenden, A. E. ; Henry, R. L. ; Twigg, M. E. ; Culbertson, J. C. ; Gorman, R. J.
出版情報: GaN and related alloys : symposium held November 30-December 4, 1998, Boston, Massachusetts, U.S.A..  pp.G3.70.1-,  1999.  Warrendale, Pa..  MRS - Materials Research Society
シリーズ名: Materials Research Society symposium proceedings
シリーズ巻号: 537
8.

国際会議録
国際会議録
8. Extrinsic Performance Limitations of AlGaN/GaN Heterostructre Field Effect Transistors
Ruden, P. P. ; Albrecht, J. D. ; Sutandi, A. ; Binari, S. C. ; Ikossi-Anastasiou, K. ; Ancona, M. G. ; Henry, R. L. ; Koleske, D. D. ; Wickenden, A. E.
出版情報: GaN and related alloys : symposium held November 30-December 4, 1998, Boston, Massachusetts, U.S.A..  pp.G6.35.1-,  1999.  Warrendale, Pa..  MRS - Materials Research Society
シリーズ名: Materials Research Society symposium proceedings
シリーズ巻号: 537
9.

国際会議録
国際会議録
9. Microstructure of GaN Grown on (1120) Sapphire
Ruterana, P. ; Wickenden, A. E. ; Twigg, M. E. ; Koleske, D. D. ; Henry, R. L. ; Tottereau, O.
出版情報: GaN and related alloys - 2000 : symposium held November 27-December 1, 2000, Boston, Massachusetts, U.S.A..  2001.  Warrendale, Pa..  Materials Research Society
シリーズ名: Materials Research Society symposium proceedings
シリーズ巻号: 639
10.

国際会議録
国際会議録
10. A Model for the Critical Height for Dislocation Annihilation and Recombination in GaN Columns Deposited by Patterned Growth
Twigg, M. E. ; Bassim, N. D. ; Eddy, C. R. ; Henry, R. L. ; Holm, R. T. ; Mastro, M. A.
出版情報: GaN, AIN, InN and their alloys : symposium held November 29-December 3, 2004, Boston, Massachusetts, U.S.A..  pp.677-684,  2005.  Warrendale, Pa..  Materials Research Society
シリーズ名: Materials Research Society symposium proceedings
シリーズ巻号: 831