1.

国際会議録
国際会議録
1. Fabrication of a P-Channel SiC-IGBT with High Channel Mobility
S. Katakami ; H. Fujisawa ; K. Takenaka ; H. Ishimori ; S. Takasu
出版情報: Silicon carbide and related materials 2012 : selected, peer reviewed papers from the 9th European Conference on Silicon Carbide and Related Materials (ECSCRM 2012), September 2-6,2012, St. Petersburg, Russian Federation.  pp.958-961,  2013.  Aedermannsdorf, Switzerland.  Trans Tech Publications
シリーズ名: Materials science forum
シリーズ巻号: 740-742
2.

国際会議録
国際会議録
2. 13-kV, 20-A 4H-SiC PiN Diodes for Power System Applications
D. Okamoto ; Y. Tanaka ; T. Mizushima ; M. Yoshikawa ; H. Fujisawa
出版情報: Silicon carbide and related materials 2013 : selected, peer reviewed papers from the 15th International Conference on Silicon Carbide and Related Materials (ICSCRM 2013), September 29 - October 4, 2013, Miyazaki, Japan.  pp.855-858,  2014.  Aedermannsdorf, Switzerland.  Trans Tech Publications
シリーズ名: Materials science forum
シリーズ巻号: 778-780
3.

国際会議録
国際会議録
3. Effect of Current-Spreading Layer Formed by Ion Implantation on the Electrical Properties of High-Voltage 4H-SiC p-Channel IGBTs
T. Deguchi ; S. Katakami ; H. Fujisawa ; K. Takenaka ; H. Ishimori
出版情報: Silicon carbide and related materials 2013 : selected, peer reviewed papers from the 15th International Conference on Silicon Carbide and Related Materials (ICSCRM 2013), September 29 - October 4, 2013, Miyazaki, Japan.  pp.1038-1041,  2014.  Aedermannsdorf, Switzerland.  Trans Tech Publications
シリーズ名: Materials science forum
シリーズ巻号: 778-780
4.

国際会議録
国際会議録
4. Device Performance and Switching Characteristics of 16 kV Ultrahigh-Voltage SiC Flip-Type n-Channel IE-IGBTs
Y. Yonezawa ; T. Mizushima ; K. Takenaka ; H. Fujisawa ; T. Deguchi
出版情報: Silicon Carbide and Related Materials 2014 : Selected peer reviewed papers from the European Conference on Silicon Carbide & Related Materials (ECSCRM 2014), September 21-25, 2014, Grenoble, France.  pp.842-846,  2015.  Aedermannsdorf, Switzerland.  Trans Tech Publications
シリーズ名: Materials science forum
シリーズ巻号: 821-823
5.

国際会議録
国際会議録
5. A Novel Iridium Precursor for MOCVD
K. Kawano ; T. Furakawa ; M. Takamori ; K. Tada ; T. Yamakawa ; N. Oshima ; H. Fujisawa ; M. Shimizu
出版情報: Physics and technology of high-k gate dielectrics III.  pp.133-138,  2006.  Pennington, N.J..  Electrochemical Society
シリーズ名: ECS transactions
シリーズ巻号: 1(5)
6.

国際会議録
国際会議録
6. Photo-enhanced MOCVD of Pb(Zr,i)O3 thin films using O3
M. Shimizu ; M. Sugiyama ; H. Fujisawa ; T. Shiosaki
出版情報: Second International Conference on Thin Film Physics and Applications : '94 TFPA : 15-17 April 1994, Shanghai, China.  pp.478-483,  1994.  Bellingham, WA.  Society of Photo-optical Instrumentation Engineers
シリーズ名: Proceedings of SPIE - the International Society for Optical Engineering
シリーズ巻号: 2364