1.

国際会議録
国際会議録
1. *ELECTRICAL PROPERTIES OF Si/SiGe STRUCTURES GROWN BY LOW TEMPERATURE EPITAXY
Temkin, H. ; Green, M. L. ; Brasen, D. ; Bean. J. C.
出版情報: Rapid thermal annealing/chemical vapor deposition and integrated processing : sympoisium held April 25-28, 1989, San Diego, California, U.S.A..  pp.65-70,  1989.  Pittsburgh, Pa..  Materials Research Society
シリーズ名: Materials Research Society symposium proceedings
シリーズ巻号: 146
2.

国際会議録
国際会議録
2. HIGH QUALITY Si AND Si1-XGeX FILMS AND HETEROJUNCTION BIPOL;AR TRANSISTORS GROWN BY RAPID THERMAL CHEMICAL VAPOR DEPOSITION (RTCVD)
Green, M. L. ; Brasen, D. ; Temkin, H. ; Kannan, V. C. ; Luftman, H. S.
出版情報: Rapid thermal annealing/chemical vapor deposition and integrated processing : sympoisium held April 25-28, 1989, San Diego, California, U.S.A..  pp.55-64,  1989.  Pittsburgh, Pa..  Materials Research Society
シリーズ名: Materials Research Society symposium proceedings
シリーズ巻号: 146
3.

国際会議録
国際会議録
3. Soft Breakdown in Ultrathin Oxides
Weir, B. E. ; Silverman, P. J. ; Alers, G. B. ; Monroe, D. ; Alam, M. A. ; Sorsch, T. W. ; Green, M. L. ; Timp, G. L. ; Ma, Y. ; Frei, M. ; Liu, C. T. ; Bude, J. D. ; Krisch, K. S.
出版情報: Ultrathin SiO[2] and high-K materials for USLI gate dielectrics : symposium held April 5-8, 1999, in San Francisco, California, U.S.A..  pp.301-,  1999.  Warrendale, PA.  MRS - Materials Research Society
シリーズ名: Materials Research Society symposium proceedings
シリーズ巻号: 567
4.

国際会議録
国際会議録
4. Relationship Between Interfacial Roughness and Dielectric Reliability for Silicon Oxynitride Gate Dielectrics Processed With Nitric Oxide
Sapjeta, J. ; Green, M. L. ; Chang, J. P. ; Silverman, P. J. ; Sorsch, T. W. ; Weir, B. E. ; Gladden, W. ; Ma, Y. ; Sung, C. Y. ; Lennard, W. N.
出版情報: Ultrathin SiO[2] and high-K materials for USLI gate dielectrics : symposium held April 5-8, 1999, in San Francisco, California, U.S.A..  pp.289-,  1999.  Warrendale, PA.  MRS - Materials Research Society
シリーズ名: Materials Research Society symposium proceedings
シリーズ巻号: 567