1.

国際会議録
国際会議録
1. Two- and three-dimensional photonic crystals of titanium dioxide and optical properties [5931-07]
Awazu, K. ; Wang, X. ; Fujimaki, M. ; Imai, H. ; Kuriyama, T. ; Ohki, Y.
出版情報: Nanoengineering: fabrication, properties, optics, and devices II : 3-4 August, 2005, San Diego, California.  pp.593106-593106,  2005.  Bellingham, Wash..  SPIE - The International Society of Optical Engineering
シリーズ名: Proceedings of SPIE - the International Society for Optical Engineering
シリーズ巻号: 5931
2.

国際会議録
国際会議録
2. Distribution Profile of Deep Levels in SiC Observed by Isothermal Capacitance Transient Spectroscopy
Fujimaki, M. ; Ono, Rudi ; Kushibe, M. ; Masahara, K. ; Kojima, K. ; Shinohe, T. ; Okushi, H. ; Arai, K.
出版情報: Silicon carbide and related materials 2001 : ICSCRM2001, proceedings of the International Conference on Silicon Carbide and Related Materials 2001, Tsukuba, Japan, October 28-November 2, 2001.  pp.851-854,  2002.  Zuerich, Switzerland.  Trans Tech Publications
シリーズ名: Materials science forum
シリーズ巻号: 389-393
3.

国際会議録
国際会議録
3. Ion-Implantation Induced Deep Levels in SiC Studied by Isothermal Capacitance Transient Spectroscopy (ICTS)
Ono, R. ; Fujimaki, M. ; Senzaki, J. ; Tanimoto, S. ; Shinohe, T. ; Okushi, H. ; Arai, K.
出版情報: Silicon carbide and related materials 2001 : ICSCRM2001, proceedings of the International Conference on Silicon Carbide and Related Materials 2001, Tsukuba, Japan, October 28-November 2, 2001.  pp.847-850,  2002.  Zuerich, Switzerland.  Trans Tech Publications
シリーズ名: Materials science forum
シリーズ巻号: 389-393
4.

国際会議録
国際会議録
4. Breakdown Electric Field in 4H-SiC Epitaxial Layer Grown on Various Net-Doping Substrates
Ono, R. ; Fujimaki, M. ; Hon-Joo, N. ; Tanimoto, S. ; Shinohe, T. ; Yatsuo, T. ; Okushi, H. ; Arai, K.
出版情報: Silicon carbide and related materials 2002 : ECSCRM2002, proceedings of the 4th European Conference on Silicon Carbide and Related Materials, September 2-5, 2002, Linköping, Sweden.  pp.435-438,  2003.  Zuerich, Switzerland.  Trans Tech Publications
シリーズ名: Materials science forum
シリーズ巻号: 433-436
5.

国際会議録
国際会議録
5. Ion-Implantation Induced Deep Levels in SiC Studied by Isothermal Capacitance Transient Spectroscopy (ICTS)
Ono, R. ; Fujimaki, M. ; Senzaki, J. ; Tanimoto, S. ; Shinohe, T. ; Okushi, H. ; Arai, K.
出版情報: Silicon carbide and related materials 2001 : ICSCRM2001, proceedings of the International Conference on Silicon Carbide and Related Materials 2001, Tsukuba, Japan, October 28-November 2, 2001.  pp.847-850,  2002.  Zuerich, Switzerland.  Trans Tech Publications
シリーズ名: Materials science forum
シリーズ巻号: 389-393
6.

国際会議録
国際会議録
6. Distribution Profile of Deep Levels in SiC Observed by Isothermal Capacitance Transient Spectroscopy
Fujimaki, M. ; Ono, R. ; Kushibe, M. ; Masahara, K. ; Kojima, K. ; Shinohe, T. ; Okushi, H. ; Arai, K.
出版情報: Silicon carbide and related materials 2001 : ICSCRM2001, proceedings of the International Conference on Silicon Carbide and Related Materials 2001, Tsukuba, Japan, October 28-November 2, 2001.  pp.851-854,  2002.  Zuerich, Switzerland.  Trans Tech Publications
シリーズ名: Materials science forum
シリーズ巻号: 389-393