1.

国際会議録
国際会議録
1. 4H-SiC (1120) Epitaxial Growth
Kimoto, T. ; Yamamoto, T. ; Chen, Z. Y. ; Yano, H. ; Matsunami, H.
出版情報: Silicon carbide and related materials - 1999 : ICSCRM'99, proceedings of the International Conference on Silicon Carbide and Related Materials - 1999, Research Triangle Park, North Carolina, USA, October 10-15, 1999.  pp.189-192,  2000.  Zuerich, Switzerland.  Trans Tech Publications
シリーズ名: Materials science forum
シリーズ巻号: 338-342(1)
2.

国際会議録
国際会議録
2. Effects of Annealing on the Structure and Photoluminescence of Amorphous SiC:Tb Films Deposited on Porous Silicon
Xu, D. Y. ; Liu, Y. P. ; Chen, Z. Y. ; He, Z. W. ; Liu, X. Q. ; Wang, Y. Y.
出版情報: PRICM 5 : the Fifth Pacific Rim International Conference on Advanced Materials and Processing, November 2-5, 2004, Beijing, China.  pp.3681-3684,  2005.  Uetikon-Zuerich.  Trans Tech Publications
シリーズ名: Materials science forum
シリーズ巻号: 475-479(5)
3.

国際会議録
国際会議録
3. The role of AFM in semiconductor technology development: the 65 nm technology node and beyond (Invited Paper)
Bao, N. K. ; Chen, Z. Y.
出版情報: Metrology, Inspection, and Process Control for Microlithography XIX.  pp.127-139,  2005.  Bellingham, Wash..  SPIE - The International Society of Optical Engineering
シリーズ名: Proceedings of SPIE - the International Society for Optical Engineering
シリーズ巻号: 5752