1.

国際会議録
国際会議録
1. THE ROLE OF OXIDE IMPURITIES IN SURFACE RESIDUE NUCLEATION DUE TO ANHYDROUS HF/METHANOL VAPOR PHASE CLEANING
Carter, R.J. ; Hauser, J.R. ; Nemanich, R.J.
出版情報: Cleaning technology in semiconductor device manufacturing : proceedings of the sixth international symposium.  pp.137-144,  1999.  Pennington, NJ.  Electrochemical Society
シリーズ名: Electrochemical Society Proceedings Series
シリーズ巻号: 99-36
2.

国際会議録
国際会議録
2. Effect of Al-Content and Post Deposition Annealing on the Electrical Properties of Ultra-Thin HfAlxOy Layers
Carter, R.J. ; Tsai, W. ; Young, E. ; Caymax, M. ; Maes, J.W. ; Chen, P.J. ; Delabie, A. ; Zhao, C. ; Gendt, S.De ; Heyns, M.
出版情報: Novel materials and processes for advances CMOS : symposium held December 2-4, 2002, Boston, Massachusetts, U.S.A..  pp.35-40,  2003.  Warrendale, Pa..  Materials Research Society
シリーズ名: Materials Research Society symposium proceedings
シリーズ巻号: 745