1.

国際会議録
国際会議録
1. Solid-Phase Epitaxial Regrowth and Dopant Activation of Arsenic-Implanted Metastable Pseudomorphic Ge0.08Si0.92 and Ge0.16Si0.84 on Si(100)
Lie, D. Y. C. ; Song, J. H. ; Nicolet, M. -A. ; Theodore, N. D. ; Candelaria, J. ; Thomas, S. G. ; Tanner, M. O. ; Wang, K. L.
出版情報: Strained layer epitaxy - materials processing and device applications : symposium held April 17-19, 1995, San Francisco, California, U.S.A..  pp.467-,  1995.  Pittsburgh, PA.  MRS - Materials Research Society
シリーズ名: Materials Research Society symposium proceedings
シリーズ巻号: 379
2.

国際会議録
国際会議録
2. Stability and precipitation kinetics in Si1-yCy/Si and Si1-x-yGexCy/Si heterostructures prepared by solid phase epitaxy
Strane, J. W. ; Picraux, S. T. ; Stein, H. J. ; Lee, S. R. ; Candelaria, J. ; Theodore, D. ; Mayer, J. W.
出版情報: Crystallization and related phenomena in amorphous materials : symposium held November 29-December 2, 1993, Boston, Massachusetts, U.S.A..  pp.467-,  1994.  Pittsburgh, Pa..  MRS - Materials Research Society
シリーズ名: Materials Research Society symposium proceedings
シリーズ巻号: 321