1.

国際会議録
国際会議録
1. Local Electronic Structure of Defects in GaN From Spatially Resolved Electron Energy-Loss Spectroscopy
Natusch, M. K. H. ; Botton, G. A. ; Broom, R. F. ; Brown, P. D. ; Tricker, D. M. ; Humphreys, C. J.
出版情報: Nitride semiconductors : symposium held December 1-5, 1997, Boston, Massachusetts, U.S.A..  pp.763-,  1998.  Warrendale, Pa..  MRS - Materials Research Society
シリーズ名: Materials Research Society symposium proceedings
シリーズ巻号: 482
2.

国際会議録
国際会議録
2. A Combined TEM/RHEED, SEM/CL Study of Epitaxial GaN
Brown, P. D. ; Tricker, D. M. ; Xin, Y. ; Cheng, T. S. ; Foxon, C. T. ; Evans, D. ; Galloway, S. A. ; Brock, J. ; Humphreys, C. J.
出版情報: Nitride semiconductors : symposium held December 1-5, 1997, Boston, Massachusetts, U.S.A..  pp.399-,  1998.  Warrendale, Pa..  MRS - Materials Research Society
シリーズ名: Materials Research Society symposium proceedings
シリーズ巻号: 482
3.

国際会議録
国際会議録
3. TEM and PL Characterization of MBE-Grown Epitaxial GaN/GaAs
Xin, Yan ; Brown, P. D. ; Boothroyd, C. B. ; Preston, A. R. ; Humphreys, C. J. ; Cheng, T. S. ; Foxon, C. T. ; Andrianov, A. V. ; Orton, J. W.
出版情報: III-Nitride, SiC, and Diamond Materials for Electronic Devices : symposium held April, 1996, San Francisco, California, U.S.A..  pp.311-,  1996.  Pittsburgh, Pa..  MRS - Materials Research Society
シリーズ名: Materials Research Society symposium proceedings
シリーズ巻号: 423