1.

国際会議録
国際会議録
1. Highly efficient InGaN/GaN MQW for blue- and green-light-emitting structures grown in production MOVPE reactors
Bremser,M.D. ; Luenenbuerger,M. ; Protzmann,H. ; Heuken,M.
出版情報: Light-emitting diodes : research, manufacturing, and applications IV : 26-27 January 2000, San Jose, California.  pp.100-104,  2000.  Bellingham, Wash..  SPIE - The International Society for Optical Engineering
シリーズ名: Proceedings of SPIE - the International Society for Optical Engineering
シリーズ巻号: 3938
2.

国際会議録
国際会議録
2. Growth and Characterization of Thin Films and Patterned Substrates of III-V Nitrides on SiC(0001)Substrates
Davis,R.F. ; Bremser,M.D. ; Nam,O.H. ; Zheleva,T. ; Perry,W.G. ; Ward,B.L. ; Nemanich,R.J.
出版情報: Silicon carbide, III-nitrides and related materials, ICSCIII-N'97 : proceedings of the International Conference on Silicon Carbide, III-Nitrides and Related Materials, Stockholm, Sweden, September 1997.  Part2  pp.1111-1114,  1998.  Zuerich, Switzerland.  Trans Tech Publications
シリーズ名: Materials science forum
シリーズ巻号: 264-268
3.

国際会議録
国際会議録
3. Silicon as a substrate in multiwafer MOVPE GaN technology
Alam,A. ; Schineller,B. ; Protzmann,H. ; Lunenburger,M. ; Heuken,M. ; Bremser,M.D. ; Woelk,E. ; Dadgar,A. ; Krost,A.
出版情報: Light-Emitting Diodes: Research, Manufacturing, and Applications V.  pp.158-164,  2001.  Bellingham, Wash..  SPIE-The International Society for Optical Engineering
シリーズ名: Proceedings of SPIE - the International Society for Optical Engineering
シリーズ巻号: 4278