1.

国際会議録
国際会議録
1. Investigating the differences in low-frequency noise behavior of npn and pnp SiGe HBTs fabricated in a complementary SiGe HBT BiCMOS on SOI technology
Zhao, E. ; Krithivasan, R. ; Sutton, A. K. ; Jin, Z. ; Cressler, J. D. ; El-Kareh, B. ; Balster, S. ; Yasuda, H.
出版情報: Noise in devices and circuits III : 24-26 May, 2005, Austin, Texas, USA.  pp.132-142,  2005.  Bellingham, Washington.  SPIE - The International Society of Optical Engineering
シリーズ名: Proceedings of SPIE - the International Society for Optical Engineering
シリーズ巻号: 5844
2.

国際会議録
国際会議録
2. (2.5) 2:45 - 3:05 PM - Enhanced 5V Complementary SiGe BiCMOS Technology by Separate NPN/PNP Emitter Formatio
El-Kareh, B. ; Balster, S. ; Steinmann, P. ; Yasuda, H. ; Nehrer, W. ; Cressler, J. ; Zhao, E. ; Hou, F. ; Dimecker, C. ; Garbe, M. ; Haeusler, A. ; Menz, P. ; Scharnagl, T. ; Schiekofer, M. ; Waitschull, M. ; Schwekendiek, H. ; Weijtmans, J.W. ; Willis, C.
出版情報: SiGe: materials, processing, and devices : proceedings of the First international symposium.  pp.53-60,  2004.  Pennington, N.J..  Electrochemical Society
シリーズ名: Electrochemical Society Proceedings Series
シリーズ巻号: 2004-07