1.

国際会議録
国際会議録
1. Significance of Gate Underlap Architecture in FinFETs for Low-Voltage Analog/RF Applications
A. Kranti ; G. Armstrong
出版情報: Silicon-on-insulator technology and devices 13.  pp.375-380,  2007.  Pennington, N.J..  Electrochemical Society
シリーズ名: ECS transactions
シリーズ巻号: 6(4)
2.

国際会議録
国際会議録
2. Operation of Double Gate Graded-Channel Transistors at Low Temperatures
M. A. Pavanello ; J. A. Martino ; T. M. Chung ; A. Kranti ; J.-P. Raskin ; D. Flandre
出版情報: Low temperature electronics and low temperature cofired ceramic based electronic devices : proceedings of the seventh International Symposium on Low Temperature Electronics and the International Symposium on Low Temperature Cofired CeramicBbased Electronic Devices.  pp.50-60,  2003.  Pennington, NJ.  Electrochemical Society
シリーズ名: Electrochemical Society Proceedings Series
シリーズ巻号: 2003-27