Silicon Carbide Power Devices for Use in Hybrid-EV

Silicon Carbide Power Devices for Use in Hybrid-EV

著者名:

Casady,Jeffrey B. ( Northrop Grumman Corp. )

Agarwal,Anant K. ( Sterling Semiconductor )

掲載資料名:

Aerospace Power Systems Conference proceedings

シリーズ名:

SAE publication

シリーズ巻号:

P-322

発行年:

1998

通号:

981284

ペーパー番号:

981284

開始ページ:

245

終了ページ:

250

総ページ数:

6

出版情報:

Warrendale, Pa.: Society of Automotive Engineers

ISSN:

10975888

ISBN:

9780768001884 [0768001889]

言語:

英語

請求記号:

S10300/P-322

資料種別:

テクニカルペーパー

詳細

TDL書誌ID:	ZA00000297
シリーズID:	PA00000002
会議名:	SAE Aerospace Power Systems Conference
回次:	1998
会議開催地:	Williamsburg, VA, USA
会議開催年:	1998.04.21-1998.04.23

類似資料:

1 テクニカルペーパー "Silicon Carbide Temperature-Tolerant Electronics for Electric, Hybrid-EV" Casady,Jeffrey, Perkins,John, Winter,T., Brandt,C., Agarwal,A., Siergiej,R., Seshadri,S., Hopkins,Richard "Society of Automotive Engineering, Inc."	7 国際会議録 1400 V 4H-SiC Power MOSFETs Agarwal,A.K., Casady,J.B., Rowland,L.B., Valek,W.F., Brandt,C.D. Trans Tech Publications
2 国際会議録 4H-SiC Power Devices: Comparative Overview of UMOS, DMOS, and GTO Device Structures Casady, J. B., Agarwal, A. K., Rowland, L. B., Seshadri, S., Siergiej, R. R., Mani, S. S., Sheridan, D. C., Sanger, P. … MRS - Materials Research Society	8 国際会議録 Silicon Carbide Power Devices and Processing Casady, J. B., Bonds, J. R., Draper, W. A., Merrett, J. N., Sankin, I., Seale, D., Mazzola, M. S. Materials Research Society
3 テクニカルペーパー SiC high temperature electronics for next generation aircraft controls systems Perkins, John F., Hopkins, Richard H., Brandt, Charles D., Agarwal, Anant K., Seshadri, Suresh, Siergiej, Richard R. The American Society of Mechanical Engineers	9 国際会議録 Epitaxial Growth and Characterization of SiC on Different Orientations Larry B. Rowland, Canhua Li, Greg T. Dunne, Jody A. Fronheiser Materials Research Society
4 国際会議録 Critical Materials, Device Design, Performance and Reliability Issues in 4H-SiC Power UMOSFET Structures Agarwal, A. K., Siergiej, R. R., Seshadri, S., White, M. H., McMullin, P. G., Burk, A. A., Rowland, L. B., Brandt, C. … MRS - Materials Research Society	10 国際会議録 Design and Process Issues for Silicon Carbide Power DiMOSFETS Ryu, Sei-Hyung, Agarwal, Anant K., Saks, Nelson S., Das, Mrinal K., Lipkin, Lori A., Singh, Ranbir, Palmour, John W. Materials Research Society
5 国際会議録 4H-SiC Gate Turn-Off(GTO)Thyristor Development Casady,J.B., Agarwal,A.K., Rowland,L.B., Siergiej,R.R., Seshadri,S., Mani,S., Barrows,J., Piceone,D., Sanger,P.A., … Trans Tech Publications	11 国際会議録 Progress in Cold-Wall Epitaxy for 4H-SiC High-Power Devices L.B. Rowland, G.T. Dunne, J. Fronheiser, S. Soloviev Trans Tech Publications
6 国際会議録 *Current status of SiC power switching devices: Diodes and GTOs Seshadri, S., Agarwal, A. K., Hall, W. B., Mani, S. S., MacMillan, M. F., Rodrigues, R., Hanson, T., Khatri, S., Sanger, … MRS-Materials Research Society	12 国際会議録 SiC Power Devices-An Overview Agarwal, Anant, Das, Mrinal, Krishnaswami, Sumithra, Palmour, John, Richmond, James, Ryu, Sei-Hyung Materials Research Society

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