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SILICON CARBIDE, A HIGH TEMPERATURE SEMICONDUCTOR

著者名:
Powell, Anthony J. ( Lewis Research Center )  
掲載資料名:
NASA Technical Reports
発行年:
1983
号:
NASA-TM-83514
通号:
G3/76 42810
パート:
NAS 1.15:83514
ペーパー番号:
N84-14932
開始ページ:
1
終了ページ:
7
総ページ数:
7
出版情報:
National Aeronautics and Space Administration
言語:
英語
資料種別:
テクニカルペーパー

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