SiC high temperature electronics for next generation aircraft controls systems

SiC high temperature electronics for next generation aircraft controls systems

著者名:

Perkins, John F. ( Westinghouse Science & Technology Center )

掲載資料名:

A.S.M.E. paper

シリーズ名:

ASME Technical Paper : GT

シリーズ巻号:

1996

発行年:

1996

通号:

96-GT-106

ペーパー番号:

96-GT-106

出版情報:

New York: The American Society of Mechanical Engineers

言語:

英語

請求記号:

A11800

資料種別:

テクニカルペーパー

詳細

TDL書誌ID:	ZA00002367
シリーズID:	PA00000136
会議名:	International Gas Turbine and Aeroengine Congress & Exhibition
回次:	1996
会議開催地:	Birmingham, UK
会議開催年:	1996.06.10-1996.06.13
論文注記:	Presented at the International Gas Turbine and Aeroengine Congress & Exhibition Birmingham, UK - June 10-13, 1996

類似資料:

1 テクニカルペーパー "Silicon Carbide Temperature-Tolerant Electronics for Electric, Hybrid-EV" Casady,Jeffrey, Perkins,John, Winter,T., Brandt,C., Agarwal,A., Siergiej,R., Seshadri,S., Hopkins,Richard "Society of Automotive Engineering, Inc."	7 国際会議録 4H-SiC DMOSFETs for High Frequency Power Switching Applications Ryu, Sei-Hyung, Agarwal, Anant K., Richmond, James, Palmour, John W. Materials Research Society
2 テクニカルペーパー Silicon Carbide Power Devices for Use in Hybrid-EV Casady,Jeffrey B., Agarwal,Anant K., Seshadri,Suresh, Siergiej,Richard R., MacMillan,Michael F., Dunne,Greg T., … Society of Automotive Engineers	8 国際会議録 Development of a Next Generation Canister Sipping System Richard E. Longenecker, John D. Wood American Society of Mechanical Engineers
3 国際会議録 Critical Materials, Device Design, Performance and Reliability Issues in 4H-SiC Power UMOSFET Structures Agarwal, A. K., Siergiej, R. R., Seshadri, S., White, M. H., McMullin, P. G., Burk, A. A., Rowland, L. B., Brandt, C. … MRS - Materials Research Society	9 国際会議録 Reliability of Nitrided Oxides in N- and P-Type 4H-SiC MOS Structures Krishnaswami, Sumi, Das, Mrinal K., Agarwal, Anant K., Palmour, John W. Materials Research Society
4 国際会議録 4H-SiC Power Devices: Comparative Overview of UMOS, DMOS, and GTO Device Structures Casady, J. B., Agarwal, A. K., Rowland, L. B., Seshadri, S., Siergiej, R. R., Mani, S. S., Sheridan, D. C., Sanger, P. … MRS - Materials Research Society	10 国際会議録 A Case for High Temperature, High Voltage SiC Bipolar Devices A. Agarwal Trans Tech Publications
5 国際会議録 4H-SiC Gate Turn-Off(GTO)Thyristor Development Casady,J.B., Agarwal,A.K., Rowland,L.B., Siergiej,R.R., Seshadri,S., Mani,S., Barrows,J., Piceone,D., Sanger,P.A., … Trans Tech Publications	11 国際会議録 Degradation of Current Gain in SiC BJTs Anant Agarwal, Sumi Krishnaswami, James Richmond, Craig Capell, Sei-Hyung Ryu, John Palmour, Kenneth Jones, Charles … Materials Research Society
6 国際会議録 Reliability of High Voltage 4H-SiC MOSFET Devices Sumi Krishnaswami, Sei-Hyung Ryu, Bradley Heath, Anant Agarwal, John Palmour, Aivars Lelis, Charles Scozzie, James … Materials Research Society	12 国際会議録 High Temperature Characterization of 4H-SiC Bipolar Junction Transistors Krishnaswami, S., Agarwal, A.K., Richmond, J., Capell, C., Ryu, S.H., Palmour, J.W., Geil, B.R., Katsis, D., Scozzie, … Trans Tech Publications

1

2

3

4

5

6

7

8

9

10

11

12