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1200 V SiC IE-UMOSFET with Low On-Resistance and High Threshold Voltage

著者名:
S. Harada
Y. Kobayashi
A. Kinoshita
N. Ohse
T. Kojima
M. Iwaya
H. Shiomi
H. Kitai
S. Kyogoku
K. Ariyoshi
Y. Onishi
H. Kimura
さらに 7 件
掲載資料名:
Silicon Carbide and Related Materials 2016
シリーズ名:
Materials science forum
シリーズ巻号:
897
発行年:
2017
開始ページ:
497
終了ページ:
500
総ページ数:
4
出版情報:
Aedermannsdorf, Switzerland: Trans Tech Publications
ISSN:
02555476
ISBN:
9783035710434 [3035710430]
言語:
英語
請求記号:
M23650
資料種別:
国際会議録

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