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Design Optimization of a High Temperature 1.2 kV 4H-SiC Buried Grid JBS Rectifier

著者名:
H. Elahipanah
N. Thierry-Jebali
S.A. Reshanov
W. Kaplan
A. Zhang
J.K. Lim
M. Bakowski
M. Östling
A. Schöner
さらに 4 件
掲載資料名:
Silicon Carbide and Related Materials 2016
シリーズ名:
Materials science forum
シリーズ巻号:
897
発行年:
2017
開始ページ:
455
終了ページ:
458
総ページ数:
4
出版情報:
Aedermannsdorf, Switzerland: Trans Tech Publications
ISSN:
02555476
ISBN:
9783035710434 [3035710430]
言語:
英語
請求記号:
M23650
資料種別:
国際会議録

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